What is the Additional Feature ?

Name: NDS355AN
Brand: ON Semiconductor
SKU: NDS355AN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NDS355AN

Part No.:: NDS355AN

Manufacturer:: ON Semiconductor

Package:: SOT-23-3

Datasheet:: NDS355AN.pdf

Description:: MOSFET N-CH 30V 1.7A SUPERSOT3

In Stock:: 2531

Quantity:: Add To Cart

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NDS355AN Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
1.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
85mOhm @ 1.9A, 10V
Vgs(th)(Max)@Id:
2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
5 nC @ 5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
195 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
500mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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NDS355AN information

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NDS355AN Typical application Circuitry

NDS355AN

The NDS355AN is a MOSFET, specifically an N-Channel enhancement-mode Field-Effect Transistor (FET) used predominantly for fast switching applications. This component finds its usage in a broad spectrum of power management roles in diverse electronic devices, including consumer electronics, computer peripherals, and industrial machinery.

Typical Applications

A common application of the NDS355AN is in the load-switching circuitry. For instance, it can function as a high-side switch controlling power to a subsection of a system.

Parametric Features

This MOSFET is characterized by low on-resistance and an appreciable current-handling capability. With a threshold voltage usually within the range of 1V to 2.5V, it is well-suited for logic-level operations. Its ability to conduct continuous drain currents in the range of tens of amperes makes it appropriate for moderate to high power applications.

Circuit Implementation: High-Side Switch in Load Control

Here is a detailed guide on integrating the NDS355AN in a high-side switch application for load control.

1. Gate Drive Circuitry:

- The gate (pin 1) of the NDS355AN necessitates a driver circuit for modulating the MOSFET's switching. This can be implemented using a dedicated driver IC or a transistor arrangement.

- Ascertain that the gate voltage surpasses the threshold level to entirely activate the MOSFET and mitigate conductive losses.

2. Drain Connection:

- The drain terminal (pin 2) of the NDS355AN should be connected to the positive supply voltage. In a high-side configuration, this positions the MOSFET between the supply and the load.

3. Source and Load Connection:

- The source terminal (pin 3) of the NDS355AN is the point where the load connects to the MOSFET. The other end of the load then ties to the ground, completing the circuit when the MOSFET is activated.

4. Bootstrap Circuit:

- In high-side applications, a bootstrap circuit might be necessary to provide the gate drive voltage above the supply voltage, ensuring full enhancement of the NDS355AN.

5. Heat Management:

- With the NDS355AN handling substantial current, thermal management becomes essential. Incorporating appropriate heatsinking or designing a PCB that facilitates thermal dissipation is crucial to avert thermal overload.

Design Considerations

When architecting a circuit with the NDS355AN, multiple elements require attention:

1. Gate Drive Voltage: Confirm that the voltage at the gate is ample to thoroughly enhance the MOSFET.

2. Switching Speed: Elevated switching frequencies may lead to escalated switching losses. Opt for a frequency that harmonizes efficiency and operational performance.

3. Thermal Regulation: As emphasized earlier, efficient thermal management is vital for maintaining operational integrity and reliability.

4. Protective Measures: Integrate protection features like overcurrent protection to shield the MOSFET from abnormal operational scenarios.

5. PCB Layout: In rapid switching scenarios, it's imperative to reduce the loop area to minimize electromagnetic interference (EMI).

In essence, the NDS355AN is a versatile and robust component well-suited for swift switching applications such as high-side switches in load control circuits. Grasping its characteristics and contemplating pivotal design elements enables its effective integration into a multitude of electronic designs.

NDS355AN FAQ

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3. Are the NDS355AN price and inventory displayed accurate?

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6. What is the process for return or replacement of NDS355AN?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NDS355AN we delivered, we will accept the replacement or return of the NDS355AN only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NDS355AN.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations