What is the Additional Feature ?

Name: NDS351AN
Brand: ON Semiconductor
SKU: NDS351AN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NDS351AN

Part No.:: NDS351AN

Manufacturer:: ON Semiconductor

Package:: SOT-23-3

Datasheet:: NDS351AN.pdf

Description:: MOSFET N-CH 30V 1.4A SUPERSOT3

In Stock:: 2134

Quantity:: Add To Cart

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NDS351AN Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
PowerTrench®
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
1.4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
160mOhm @ 1.4A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
1.8 nC @ 4.5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
145 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
500mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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NDS351AN information

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NDS351AN Typical application Circuitry

NDS351AN

The NDS351AN is a type of MOSFET, specifically an N-channel enhancement-mode field-effect transistor (FET) designed for high-speed switching applications. This component is commonly utilized in various power management functions in consumer electronics, computing devices, and industrial systems.

Key Applications: One typical application for the NDS351AN is in a power-switching circuit, such as a DC-DC converter, where it can serve as a low-side switch.

Characteristic Parameters: The NDS351AN features a low on-resistance and a relatively high current handling capability. It has a threshold voltage typically around 1V to 2.5V, making it suitable for logic-level applications. Moreover, it can handle continuous drain currents in the tens of amperes range, making it suitable for moderate power applications.

Example Circuit: Low-Side Switch in a DC-DC Converter

Let's delve into the specifics of using the NDS351AN in a low-side switch application within a DC-DC converter.

1. Gate Drive Circuitry:

- The gate of the NDS351AN (pin 1) requires a gate drive circuit to control the switching of the MOSFET. This can be achieved using a dedicated gate driver IC or a simple transistor-based circuit.

- It is essential to ensure that the gate voltage exceeds the threshold voltage to fully turn on the MOSFET and minimize conduction losses.

2. Source Connection:

- The source terminal of the NDS351AN (pin 2) should be connected to the ground reference of the circuit. This ensures a complete circuit when the MOSFET is turned on, allowing current to flow through the load.

3. Drain Connection:

- The drain terminal (pin 3) of the NDS351AN is where the load is connected. In a DC-DC converter, this would typically be connected to the inductor's one end, forming part of the energy storage element in the converter.

4. Flyback Diode:

- A flyback diode is crucial for inductive loads to prevent voltage spikes when the MOSFET turns off. The anode of the diode connects to the drain terminal (pin 3) and its cathode to the input voltage supply, providing a path for the inductive kickback.

5. Heat Dissipation:

- Since the NDS351AN can handle significant currents, it's essential to consider heat dissipation. Adequate heat sinking or a PCB with a good thermal design is necessary to prevent thermal runaway.

Design Considerations

When designing a circuit with the NDS351AN, several factors should be considered:

1. Gate Drive Voltage: Ensure that the gate drive voltage is adequate to fully turn on the MOSFET.

2. Switching Frequency: Higher switching frequencies can lead to increased switching losses. Select an appropriate frequency that balances efficiency and performance.

3. Thermal Management: As mentioned, proper thermal management is crucial to prevent overheating and ensure reliability.

4. Protection Circuitry: Include protection mechanisms such as overcurrent protection to safeguard the MOSFET from abnormal operating conditions.

5. Layout Considerations: Minimize the loop area in high-speed switching applications to reduce electromagnetic interference (EMI).

In summary, the NDS351AN is a versatile component suitable for high-speed switching applications, such as low-side switches in DC-DC converters. By understanding its characteristics and considering the critical design aspects, one can effectively incorporate this MOSFET into various electronic designs.

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6. What is the process for return or replacement of NDS351AN?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NDS351AN we delivered, we will accept the replacement or return of the NDS351AN only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NDS351AN.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations