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Name: MTB50P03HDLT4G
Brand: ON Semiconductor
SKU: MTB50P03HDLT4G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor MTB50P03HDLT4G

Part No.:: MTB50P03HDLT4G

Manufacturer:: ON Semiconductor

Package:: D²PAK

Datasheet:: MTB50P03HDLT4G.pdf

Description:: MOSFET P-CH 30V 50A D2PAK

In Stock:: 2995

Quantity:: Add To Cart

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MTB50P03HDLT4G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Last Time Buy
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
5V
RdsOn(Max)@IdVgs:
25mOhm @ 25A, 5V
Vgs(th)(Max)@Id:
2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
100 nC @ 5 V
Vgs(Max):
±15V
InputCapacitance(Ciss)(Max)@Vds:
4900 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta), 125W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

MTB50P03HDLT4G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MTB50P03HDLT4G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MTB50P03HDLT4G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MTB50P03HDLT4G information

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MTB50P03HDLT4G Typical application Circuitry

MTB50P03HDLT4G

A P-channel Power MOSFET with great efficiency for power management applications is the MTB50P03HDLT4G. It is commonly utilized in switching applications due to its low on-resistance and high threshold voltage, making it ideal for applications such as power supply circuits, motor control, and load-switching circuits where energy efficiency is crucial.

Key Specifications:

- Drain-Source Voltage (V_DS): It can withstand voltages up to -30V, making it suitable for medium voltage applications.

- Continuous Drain Current (I_D): It supports a continuous drain current of -50A, allowing it to handle high current loads.

- Power Dissipation (P_D): The device can dissipate up to 2.5W of power, which helps in determining the thermal management requirements.

- On-Resistance (R_DS(on)): It features a low on-resistance of 8mΩ, which minimizes power loss during operation.

- Package: Housed in a DPAK package, it is designed for compact applications with efficient thermal performance.

Application Scenario – Power Supply Circuit:

In a power supply circuit, the MTB50P03HDLT4G can be used for high-efficiency DC-DC conversion, specifically in the regulation stage to manage the output voltage and current to the load.

Circuit Connection Detail:

- Gate Drive Configuration: To turn on the MTB50P03HDLT4G, connect the gate (G) pin to a gate drive circuit capable of providing a negative voltage with respect to the source (S) pin. This negative voltage ensures the MOSFET operates in the enhancement mode. A gate resistor might be necessary to limit the gate charge current and dampen oscillations.

- Source Connection for Current Return Path: Connect the source (S) pin directly to the ground or common return path of the circuit. This connection is crucial for the completion of the current loop when the MOSFET is conducting.

- Drain to Load Connection: The load's negative terminal needs to be linked to the drain (D) pin. The positive supply voltage is connected to the load's positive terminal. This configuration allows the MTB50P03HDLT4G to control the power flow to the load when it switches on and off.

- Freewheeling Diode for Inductive Loads: If the load is inductive, a freewheeling diode should be placed across the load terminals. The cathode of the diode connects to the positive supply, and the anode connects to the drain of the MOSFET. This diode provides a path for the inductive kickback when the MOSFET turns off, protecting the MOSFET from voltage spikes.

Design Considerations:

- Thermal Management: Given the power dissipation characteristics of the MTB50P03HDLT4G, it is essential to ensure adequate cooling. The use of heat sinks or thermal pads might be necessary, depending on the application's thermal load.

- Gate Drive Voltage: Careful selection of the gate drive voltage is critical. It must be sufficient to fully enhance the MOSFET while not exceeding the maximum gate-source voltage rating to prevent damage.

- Switching Frequency: The switching frequency affects both the efficiency and the thermal performance of the MOSFET. Higher frequencies can increase efficiency but may also increase thermal stress. The choice of frequency should balance these factors.

- Protection Features: Implementing protection mechanisms such as over-current protection, over-temperature shutdown, and under-voltage lockout can enhance the reliability of the circuit.

Incorporating the MTB50P03HDLT4G into a power supply circuit involves a thorough understanding of its electrical characteristics and the operational demands of the application. By addressing thermal management, gate drive requirements, and protection features, designers can effectively utilize the MTB50P03HDLT4G to achieve high efficiency and reliability in their power management solutions.

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6. What is the process for return or replacement of MTB50P03HDLT4G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MTB50P03HDLT4G we delivered, we will accept the replacement or return of the MTB50P03HDLT4G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MTB50P03HDLT4G.

(3)The PartNo is unused and only in the original unpacked packaging.

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