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Name: MMBF170LT1G
Brand: ON Semiconductor
SKU: MMBF170LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor MMBF170LT1G

Part No.:: MMBF170LT1G

Manufacturer:: ON Semiconductor

Package:: SOT-23-3 (TO-236)

Datasheet:: MMBF170LT1G.pdf

Description:: MOSFET N-CH 60V 500MA SOT23-3

In Stock:: 3525

Quantity:: Add To Cart

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MMBF170LT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
500mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
5Ohm @ 200mA, 10V
Vgs(th)(Max)@Id:
3V @ 1mA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
60 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
225mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

MMBF170LT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MMBF170LT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MMBF170LT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MMBF170LT1G information

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MMBF170LT1G Typical application Circuitry

MMBF170LT1G

The MMBF170LT1G is an N-channel enhancement-mode field-effect transistor (FET). It's highly valued for its low ON resistance and low threshold voltage, making it particularly well-suited for low voltage applications.

Application Scenarios: One of the predominant applications of MMBF170LT1G is in power management circuits, where it's used as a switch to control the flow of current between different parts of a circuit.

Principal Parameters: Key features include a drain-source voltage of 60V, a continuous drain current of 500mA, and a low threshold voltage that ranges from 1V to 2.5V.

Circuit Connection for Power Management

1. Source Connection:

- Connection: The source pin (Pin 3) should be connected to the ground rail of the circuit.

- Purpose: Establishes a reference point for the MMBF170LT1G to control the flow of current effectively.

2. Drain Connection:

- Attachment: Connect the drain pin (Pin 2) to the load that needs to be switched on and off.

- Role: The drain is where the controlled current flows out, and connecting it to the load ensures the transistor can control its power state.

3. Gate Control:

- Connection: The gate pin (Pin 1) is connected to a control signal, often coming from a microcontroller or another switching device.

- Function: The control signal at the gate pin determines whether the MMBF170LT1G is ON or OFF, enabling or disabling the flow of current through the drain.

4. Pull-Down Resistor:

- Incorporation: Integrate a pull-down resistor between the gate and source to ensure that the MMBF170LT1G remains off when no control signal is applied.

- Necessity: Prevents unintended activation of the transistor, ensuring it only turns on when explicitly instructed by the control signal.

Considerations in Design

1. Voltage Levels:

- Monitoring: Keep an eye on the voltage levels applied to the gate to avoid exceeding the maximum voltage rating of the MMBF170LT1G.

- Importance: Preserving the integrity and longevity of the transistor by preventing voltage-induced damage.

2. Heat Dissipation:

- Implementation: Incorporate appropriate heat dissipation mechanisms to manage the heat generated when the MMBF170LT1G is in operation.

- Crucial Aspect: Enhances the reliability and operational life of the transistor.

3. Load Characteristics:

- Evaluation: Assess the characteristics of the load to ensure that it's compatible with the switching capacity of the MMBF170LT1G.

- Role: Guarantees efficient and reliable operation of the switching circuit, avoiding overloading the transistor.

In the final analysis, employing the MMBF170LT1G in a power management circuit requires a meticulous approach to voltage levels, heat dissipation, and load compatibility. Addressing these facets proactively ensures that the transistor performs optimally, enhancing the efficiency and reliability of the entire power management system.

MMBF170LT1G FAQ

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3. Are the MMBF170LT1G price and inventory displayed accurate?

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6. What is the process for return or replacement of MMBF170LT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MMBF170LT1G we delivered, we will accept the replacement or return of the MMBF170LT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MMBF170LT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations