What is the Additional Feature ?

Name: IRLR7843TRPBF
Brand: Infineon Technologies
SKU: IRLR7843TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRLR7843TRPBF

Part No.:: IRLR7843TRPBF

Manufacturer:: Infineon Technologies

Package:: D-Pak

Datasheet:: IRLR7843TRPBF.pdf

Description:: MOSFET N-CH 30V 161A DPAK

In Stock:: 2300

Quantity:: Add To Cart

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IRLR7843TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
161A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
3.3mOhm @ 15A, 10V
Vgs(th)(Max)@Id:
2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
50 nC @ 4.5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
4380 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
140W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

IRLR7843TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRLR7843TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRLR7843TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRLR7843TRPBF information

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IRLR7843TRPBF Typical application Circuitry

IRLR7843TRPBF

The IRLR7843TRPBF, part of the esteemed HEXFET® power MOSFET portfolio, is an N-channel device known for its low on-resistance and high density, incorporating the latest MOSFET technology to ensure maximum power efficiency and robustness. Embedded within the IRLR7843TRPBF are features tailored for high performance in diverse applications, demanding precise electrical characteristics and reliability. This component's unique specifications necessitate an in-depth exploration of its pin configuration and the subtleties involved in embedding it into a circuit.

1. Drain (D): Acting as the output, the Drain is where the current flows out. This terminal connects to the component (such as a motor, solenoid, or the input side of another stage of the circuit) that the MOSFET is powering. Considering the high-current nature of this pin, the connection must be robust, ensuring minimal voltage drop and thermal control under load.

2. Gate (G): The Gate is the control terminal. This pin doesn't draw continual current, only a small charge to switch. It connects to the output pin of the controlling device, like a microcontroller, potentially through a gate driver if high speed or high current is required for switching. To protect the MOSFET, a gate resistor is often used, ensuring controlled switching and preventing oscillations or ringing.

3. Source (S): The Source pin is the current supply terminal for the MOSFET. Typically, it's connected to the ground or the lower potential side of the power supply (depending on the configuration), forming the reference point for the Gate voltage.

4. Advanced Integration Strategies:

- Gate-Source Resistors: For stability, especially when the controlling signal is absent, a pull-down resistor might be connected between the Gate and Source to ensure the MOSFET remains off when not intentionally triggered.

- Flyback Diode Protection: When driving inductive loads like motors or solenoids with the IRLR7843TRPBF, a diode connected across the load will clamp and safely dissipate voltage spikes caused by inductive kickback, protecting the MOSFET.

- Thermal Considerations: The IRLR7843TRPBF can handle significant current, which might lead to substantial heat generation. Proper heat dissipation strategies, such as using a heatsink or ensuring good PCB layout for thermal relief, are crucial.

- Gate Protection: Transient Voltage Suppressors (TVS) or zener diodes between the Gate and Source can help manage voltage spikes, protecting against gate oxide breakdown.

- Verification of Operation Parameters: Cross-referencing operational conditions with the IRLR7843TRPBF's datasheet ensures that voltage ratings, current handling, and thermal performance are within specified limits, preventing component stress or failure.

5. Circuit Analysis and Debugging: Post-integration, a rigorous testing protocol at safe operating conditions is paramount to validate performance. Monitoring the IRLR7843TRPBF's behavior under various load scenarios will affirm proper operation within its defined parameters.

IRLR7843TRPBF FAQ

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3. Are the IRLR7843TRPBF price and inventory displayed accurate?

The price and inventory of IRLR7843TRPBF fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of IRLR7843TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRLR7843TRPBF we delivered, we will accept the replacement or return of the IRLR7843TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRLR7843TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations