What is the Additional Feature ?

Name: IRLR2908TRPBF
Brand: Infineon Technologies
SKU: IRLR2908TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRLR2908TRPBF

Part No.:: IRLR2908TRPBF

Manufacturer:: Infineon Technologies

Package:: D-Pak

Datasheet:: IRLR2908TRPBF.pdf

Description:: MOSFET N-CH 80V 30A DPAK

In Stock:: 40592

Quantity:: Add To Cart

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IRLR2908TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
80 V
Current-ContinuousDrain(Id)@25°C:
30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
28mOhm @ 23A, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
33 nC @ 4.5 V
Vgs(Max):
±16V
InputCapacitance(Ciss)(Max)@Vds:
1890 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
120W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

IRLR2908TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRLR2908TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRLR2908TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRLR2908TRPBF information

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IRLR2908TRPBF Typical application Circuitry

IRLR2908TRPBF

The IRLR2908TRPBF, an epitome of International Rectifier's HEXFET® Power MOSFET portfolio, exhibits commendable electrical characteristics, making it a preferred choice in numerous high-performance applications. These MOSFETs are designed using advanced processing technology, which facilitates minimal on-resistance and robust switching dynamics. Integrating the IRLR2908TRPBF effectively into a circuit necessitates understanding its pin structure and ensuring precise connectivity, thereby optimizing its performance attributes.

1. Drain (D): The Drain terminal, essentially the output of the MOSFET, attaches directly to the component's intended load. Depending on whether you're implementing a high-side or low-side switch, the Drain either connects to the load and then to the positive supply or directly grounds post load connection.

2. Gate (G): This is the command terminal, determining the on/off state of the IRLR2908TRPBF. Link this pin to the controller, be it a microcontroller, PWM generator, or any driving mechanism. To enhance the signal fidelity and protect the gate, integrate a gate resistor in series. This resistor modulates the switching transients and deters potential ringing.

3. Source (S): Serving as the reference and return path, the Source usually grounds in low-side switching configurations. When utilized in a high-side switch, it typically connects with the load.

4. Insightful Recommendations:

- Gate Management: To maintain the off-state during transient or undefined operational phases, consider installing a pull-down resistor on the Gate pin. This ensures the IRLR2908TRPBF remains inactive when there's no definitive gate drive.

- Protection Scheme: The gate-source voltage rating is pivotal; overshooting this can damage the IRLR2908TRPBF. A zener diode across the gate and source can provide an added protection layer, clamping excessive voltage and preserving the MOSFET's integrity.

- Thermal Insights: Operating the IRLR2908TRPBF at or near its maximum ratings will generate heat. Implementing an effective thermal management strategy, including heatsinks or thermal pads, can prevent overheating, thus enhancing the MOSFET's lifespan.

- Operational Auditing: Post circuit integration, subject your design to a thorough testing phase, ensuring that the IRLR2908TRPBF operates seamlessly within the stipulated parameters.

In summation, the IRLR2908TRPBF stands as a testament to the prowess of the HEXFET® technology, delivering performance par excellence. Meticulously interfacing this MOSFET by respecting its pin configurations and heeding the associated recommendations is imperative. It's always advisable to reference the IRLR2908TRPBF datasheet for nuanced insights and to fully harness its capabilities in your electronic designs.

IRLR2908TRPBF FAQ

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6. What is the process for return or replacement of IRLR2908TRPBF?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRLR2908TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations