What is the Additional Feature ?

Name: IRLML2502TRPBF
Brand: Infineon Technologies
SKU: IRLML2502TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRLML2502TRPBF

Part No.:: IRLML2502TRPBF

Manufacturer:: Infineon Technologies

Package:: Micro3™/SOT-23

Datasheet:: IRLML2502TRPBF.pdf

Description:: MOSFET N-CH 20V 4.2A SOT23

In Stock:: 3189

Quantity:: Add To Cart

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IRLML2502TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
20 V
Current-ContinuousDrain(Id)@25°C:
4.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.5V, 4.5V
RdsOn(Max)@IdVgs:
45mOhm @ 4.2A, 4.5V
Vgs(th)(Max)@Id:
1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
12 nC @ 5 V
Vgs(Max):
±12V
InputCapacitance(Ciss)(Max)@Vds:
740 pF @ 15 V
FETFeature:
-
PowerDissipation(Max):
1.25W (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRLML2502TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRLML2502TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRLML2502TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRLML2502TRPBF information

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IRLML2502TRPBF Typical application Circuitry

The IRLML2502TRPBF, stemming from Infineon Technologies' esteemed HEXFET Power MOSFET lineup, has earned accolades for its compactness combined with high efficiency. Specifically designed for SMD (Surface Mount Device) implementations, this N-channel MOSFET harnesses advanced silicon gate technology to deliver commendable performance with reduced on-resistance. A deep dive into the anatomy and integration techniques for the IRLML2502TRPBF will illuminate its potency and deployment intricacies.

1. Gate (G): This pivotal pin is responsible for regulating the IRLML2502TRPBF's conduction state. The gate must be interfaced with the control signal, typically emanating from a microcontroller or a dedicated driver circuit. Often, the incorporation of a gate resistor is beneficial, mitigating the risk of oscillations or transient spikes that could impact the MOSFET's performance.

2. Drain (D): Acting as the MOSFET's main output, the Drain terminal typically connects to the load. Depending on the application, the load might then proceed to connect either to the positive terminal of the power supply (as observed in high-side switch configurations) or directly to the ground (exemplified in low-side switch setups).

3. Source (S): This terminal predominantly links to the system's ground. However, in high-side switch configurations, the Source may attach to the load or a particular reference voltage.

4. Specialized Circuit Integration Insights:

- Gate Precautions: It's paramount to maintain the gate voltage within the IRLML2502TRPBF's stipulated limits. Excessive voltage can compromise the MOSFET's integrity. Implementing a zener diode between the gate and source offers a layer of protection against inadvertent voltage surges.

- Pull-Down Resistors: An integral aspect of the MOSFET's stability, especially during power transitions, involves anchoring the gate to the ground using a pull-down resistor. This practice ensures the IRLML2502TRPBF remains non-conductive in the absence of an explicit activation signal.

- Thermal Management: The IRLML2502TRPBF, although efficient, may demand cooling provisions during high-current applications. Utilize thermal pads, heat sinks, or strategically routed PCB traces to dissipate heat effectively.

- Circuit Examination: Post the integration of the IRLML2502TRPBF, conducting a methodical circuit evaluation under controlled power conditions becomes indispensable. This step ascertains the MOSFET's seamless functionality and the overall efficacy of the design.

IRLML2502TRPBF FAQ

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3. Are the IRLML2502TRPBF price and inventory displayed accurate?

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6. What is the process for return or replacement of IRLML2502TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRLML2502TRPBF we delivered, we will accept the replacement or return of the IRLML2502TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRLML2502TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations