What is the Additional Feature ?

Name: IRLML2244TRPBF
Brand: Infineon Technologies
SKU: IRLML2244TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRLML2244TRPBF

Part No.:: IRLML2244TRPBF

Manufacturer:: Infineon Technologies

Package:: Micro3™/SOT-23

Datasheet:: IRLML2244TRPBF.pdf

Description:: MOSFET P-CH 20V 4.3A SOT23

In Stock:: 2163

Quantity:: Add To Cart

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IRLML2244TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
20 V
Current-ContinuousDrain(Id)@25°C:
4.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.5V, 4.5V
RdsOn(Max)@IdVgs:
54mOhm @ 4.3A, 4.5V
Vgs(th)(Max)@Id:
1.1V @ 10µA
GateCharge(Qg)(Max)@Vgs:
6.9 nC @ 4.5 V
Vgs(Max):
±12V
InputCapacitance(Ciss)(Max)@Vds:
570 pF @ 16 V
FETFeature:
-
PowerDissipation(Max):
1.3W (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRLML2244TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRLML2244TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRLML2244TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRLML2244TRPBF information

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IRLML2244TRPBF Typical application Circuitry

IRLML2244TRPBF

The IRLML2244TRPBF, hailing from the HEXFET Power MOSFET portfolio, signifies a generation of high-density power MOSFETs highly acclaimed for their quality, efficiency, and thermal performance. Notably engineered by Infineon, this MOSFET, with its robust design and optimized technology, adapts seamlessly to a plethora of applications demanding high efficiency and power-control precision. Let's have a thorough grasp of its features and integration approach.

1. Circuit Connection Precision:

- Drain (D): Acting as the output, this terminal (D) demands a secure connection with the load. Being the conduit for the current flowing through the MOSFET when active, the Drain often interfaces directly with the high side of the load circuitry.

- Gate (G): The Gate terminal, the pivotal control input, regulates the MOSFET's operational states. The driving signal, typically from a microcontroller or pulse-width modulation (PWM) generator, connects here. It's pivotal to note that the voltage level of this signal should align with the specified gate threshold voltage in the IRLML2244TRPBF's datasheet. Employing a series resistor with this connection can modulate the MOSFET's switching speed and offer protection from voltage spikes.

- Source (S): This pin is the ground reference point of the current passing through the MOSFET. The Source generally ties to the system's ground, ensuring a stable reference point for the MOSFET's operation.

2. Advanced Integration Guidelines:

- Gate Protection Strategies: Implementing a gate-source resistor can help keep the MOSFET deactivated when the gate drive is not engaged. Additionally, a zener diode between the gate and source can be indispensable for protecting the IRLML2244TRPBF against excessive voltage, potentially caused by electromagnetic interference (EMI) or other surge events.

- Drain Considerations: If the IRLML2244TRPBF is managing an inductive load, a flyback diode is recommended across the load to protect the device from voltage spikes associated with inductive kickback.

- Thermal Management: Despite its efficiency, the IRLML2244TRPBF can encounter elevated temperatures under high current. It is important to comprehend thermal resistance and to follow the datasheet's maximum junction temperature. Effective heat dissipation methods, such as using a heat sink or improving PCB thermal characteristics, can be beneficial.

- Circuit Optimization: Before full-scale deployment, a prototype testing phase is advisable. This phase involves monitoring the IRLML2244TRPBF's behavior under different loads, ensuring it meets stability, thermal, and radio frequency (RF) performance standards.

In essence, the IRLML2244TRPBF stands as a testament to efficiency within the realm of compact power MOSFETs. Integrating this component into any circuit not only mandates a profound comprehension of its operational parameters but also an articulated execution of its connection methodology. Proper reference to the IRLML2244TRPBF's datasheet and adherence to standard electronic protocols will ensure that this tiny yet mighty MOSFET contributes optimally to the innovative sphere of modern electronics.

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6. What is the process for return or replacement of IRLML2244TRPBF?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRLML2244TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations