What is the Additional Feature ?

Name: IRLML0060TRPBF
Brand: Infineon Technologies
SKU: IRLML0060TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRLML0060TRPBF

Part No.:: IRLML0060TRPBF

Manufacturer:: Infineon Technologies

Package:: Micro3™/SOT-23

Datasheet:: IRLML0060TRPBF.pdf

Description:: MOSFET N-CH 60V 2.7A SOT23

In Stock:: 2188

Quantity:: Add To Cart

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IRLML0060TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
2.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
92mOhm @ 2.7A, 10V
Vgs(th)(Max)@Id:
2.5V @ 25µA
GateCharge(Qg)(Max)@Vgs:
2.5 nC @ 4.5 V
Vgs(Max):
±16V
InputCapacitance(Ciss)(Max)@Vds:
290 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
1.25W (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRLML0060TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRLML0060TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRLML0060TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRLML0060TRPBF information

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IRLML0060TRPBF Typical application Circuitry

IRLML0060TRPBF

The IRLML0060TRPBF, part of the renowned HEXFET series, is a manifestation of International Rectifier's commitment to power MOSFET technology. As a single N-channel device, the IRLML0060TRPBF is lauded for its compactness, efficiency, and the ability to handle high-density power management applications. Its superior performance stems from cutting-edge processing techniques that emphasize low on-resistance, making it a quintessential component in modern electronic designs. In this exposition, we shall unravel the intricacies of the IRLML0060TRPBF's pin configuration and offer comprehensive guidance on effective circuit integration.

1. Gate (G): As the IRLML0060TRPBF's control terminal, the gate orchestrates the device's switching dynamics. It is typically connected to a control signal, possibly from a microcontroller or another logic component, directing the MOSFET to be either 'on' or 'off'. Integrate a gate resistor in series to modulate the switching response, deterring any potential ringing or oscillations.

2. Drain (D): The drain, playing a pivotal role in directing the current's flow to a designated load, should be affixed to one end of this load. Subsequently, the other extremity of the load links either to the positive rail of the power source (if the MOSFET is orchestrating a high-side switch) or to the ground (for low-side switch configurations).

3. Source (S): This terminal commonly establishes a connection to the circuit's ground in low-side switch scenarios. However, when deployed in high-side switch configurations, it aligns with the load's other end.

4. Augmented Circuit Integration Perspectives:

- Gate Protection: Integrating a zener diode between the gate and source ensures that the IRLML0060TRPBF is insulated from inadvertent high-voltage transients, thus preserving the gate's structural integrity.

- Pull-Down Resistor: By introducing a pull-down resistor on the gate, the IRLML0060TRPBF is deterred from inadvertently activating, especially during interim phases when the drive signal might be dormant.

- Thermal Management: Even though the IRLML0060TRPBF is renowned for its efficiency, it's imperative to consider potential thermal accruals during high-current operations. Any associated concerns can be mitigated by including heat sinks or ensuring appropriate ventilation.

- Operational Protocols: Always corroborate that the applied gate voltage, as well as other operational parameters, align with the specifications delineated in the IRLML0060TRPBF's datasheet. This is pivotal in sidestepping unforeseen operational anomalies.

To encapsulate, the IRLML0060TRPBF stands as a testament to the evolution of power MOSFET technology, catering to modern electronic demands with aplomb. Ensuring meticulous circuit connections and understanding the nuances of this component can significantly elevate the efficiency and reliability of any electronic design. For those aiming for unparalleled performance, the IRLML0060TRPBF's datasheet remains an invaluable resource, offering insights that can fine-tune any circuit implementation.

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6. What is the process for return or replacement of IRLML0060TRPBF?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRLML0060TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations