What is the Additional Feature ?

Name: IRFR5410TRPBF
Brand: Infineon Technologies
SKU: IRFR5410TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFR5410TRPBF

Part No.:: IRFR5410TRPBF

Manufacturer:: Infineon Technologies

Package:: D-Pak

Datasheet:: IRFR5410TRPBF.pdf

Description:: MOSFET P-CH 100V 13A DPAK

In Stock:: 65598

Quantity:: Add To Cart

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IRFR5410TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
13A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
205mOhm @ 7.8A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
58 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
760 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
66W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRFR5410TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFR5410TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFR5410TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFR5410TRPBF information

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IRFR5410TRPBF Typical application Circuitry

IRFR5410TRPBF

The IRFR5410TRPBF, a stellar component from the celebrated HEXFET power MOSFET lineage by International Rectifier, exemplifies cutting-edge design principles, offering a P-channel MOSFET with impressive features. Being an epitome of innovation, this device, IRFR5410TRPBF, leverages advanced silicon technology to accomplish lower on-resistance and higher performance characteristics. As we embark on an exploration of this exceptional component, we'll delve into its pin-level intricacies and outline the proper procedures for circuit integration.

1. Gate (G): The Gate serves as the command center for the MOSFET, controlling its switch-on and switch-off states. When interfacing with control circuits or microcontrollers, ensure the input signal to the Gate is compatible with P-channel specifications. For instance, applying a voltage lower than the source voltage (ideally ground) turns the IRFR5410TRPBF on, whereas a signal closer to the source voltage turns it off.

2. Drain (D): The Drain of the IRFR5410TRPBF is where the current primarily exits. Depending on your application, this terminal can be linked to a load or an adjacent circuit stage. Given its P-channel nature, this MOSFET is commonly found in high-side switch configurations, with the Drain often connected to the positive end of the load.

3. Source (S): Typically, the Source pin of the IRFR5410TRPBF finds itself connected to a positive voltage supply in many applications. This pin also serves as a reference for the Gate's control signals.

4. Circuit Integration Insights:

- Ensuring Gate Stability: Introduce a resistor (often in the range of 10kΩ to 100kΩ) between the Gate and the Source. This pull-up resistor ensures the IRFR5410TRPBF remains off during transient states or when the control signal is absent.

- Protection Protocols: To shield the IRFR5410TRPBF from potential voltage surges, consider deploying a zener diode, with its cathode facing the Gate and anode linked to the Source. This acts as a voltage clamp, ensuring the Gate voltage remains within permissible bounds.

- Thermal Considerations: The IRFR5410TRPBF, when subjected to significant loads, can generate heat. Adequate heat dissipation strategies, such as attaching a heatsink or ensuring good airflow, can enhance the device's longevity and performance.

- Validity Checks: Post-assembly, it's prudent to run diagnostic tests to validate the IRFR5410TRPBF's functionality and the holistic circuit performance. Ensure the component doesn't exceed its specified voltage, current, and power limits.

In summation, the IRFR5410TRPBF embodies excellence in MOSFET design, bringing efficiency and reliability to electronic systems. When integrating this component, a nuanced understanding combined with precision yields the best outcomes. As always, referring to the datasheet of the IRFR5410TRPBF and heeding recommended practices amplifies the chances of a successful, optimal deployment in any electronic endeavor.

IRFR5410TRPBF FAQ

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6. What is the process for return or replacement of IRFR5410TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFR5410TRPBF we delivered, we will accept the replacement or return of the IRFR5410TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFR5410TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations