What is the Additional Feature ?

Name: IRFR5305TRPBF
Brand: Infineon Technologies
SKU: IRFR5305TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFR5305TRPBF

Part No.:: IRFR5305TRPBF

Manufacturer:: Infineon Technologies

Package:: D-Pak

Datasheet:: IRFR5305TRPBF.pdf

Description:: MOSFET P-CH 55V 31A DPAK

In Stock:: 41168

Quantity:: Add To Cart

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IRFR5305TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
55 V
Current-ContinuousDrain(Id)@25°C:
31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
65mOhm @ 16A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
63 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1200 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
110W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

IRFR5305TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFR5305TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFR5305TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFR5305TRPBF information

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IRFR5305TRPBF Typical application Circuitry

IRFR5305TRPBF

The IRFR5305TRPBF stands as a stellar component from International Rectifier's HEXFET Power MOSFET series, renowned for its efficiency and compactness. This specific device is a P-channel MOSFET, often selected for its advantageous traits in switching applications that require a load to be placed in the positive supply path. To harness the full capabilities of the IRFR5305TRPBF, precise knowledge about its pins and connection methodologies is indispensable.

1. Gate (G):

- Serving as the control terminal, the Gate regulates the device's switching. This pin should be connected to the control signal, usually stemming from a microcontroller or another driver circuit. The MOSFET shuts off when the gate voltage drops below a predetermined threshold (with regard to the Source). Conversely, when the voltage surpasses this threshold, the device turns on.

- A crucial consideration when interfacing with the Gate is to ensure that the voltage levels comply with the specifications of the IRFR5305TRPBF. As a best practice, integrate a pull-up resistor to maintain the default 'OFF' state of the MOSFET when no active control signal is present.

2. Drain (D): The Drain pin, acting as one of the main current-carrying terminals, should be connected to the load. In configurations with the IRFR5305TRPBF, the Drain typically attaches to the positive terminal of the load, given the P-channel orientation of the MOSFET.

3. Source (S): As the other primary current-carrying terminal, the Source usually ties directly to the positive voltage supply in the circuit. A crucial distinction between P-channel and N-channel MOSFETs is this positive connection of the Source in P-channel devices like the IRFR5305TRPBF.

4. Additional Circuit Tips:

- Gate Drive Considerations: Given that the IRFR5305TRPBF is a P-channel MOSFET, the gate drive voltage should be adeptly managed. When the gate voltage is low enough in proportion to the source voltage, the MOSFET switches on. Employ a gate drive circuit or suitable logic-level controls to ensure optimal operation.

- Protective Mechanisms: Implement a gate-to-source resistor to provide a discharge path for the gate capacitance, safeguarding against potential floating states. For enhanced protection against voltage spikes, consider adding a clamp or zener diode across the Gate and Source terminals.

- Heat Management: The IRFR5305TRPBF, during high-current or high-frequency operations, can produce considerable heat. Implementing heat sinks or ensuring efficient thermal pathways is vital for the component's longevity and optimal performance.

- Performance Audit: After circuit integration, it's prudent to conduct a thorough evaluation, analyzing the MOSFET's performance under varying conditions. This step guarantees that the IRFR5305TRPBF operates within its specified parameters, ensuring long-term reliability.

IRFR5305TRPBF FAQ

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6. What is the process for return or replacement of IRFR5305TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFR5305TRPBF we delivered, we will accept the replacement or return of the IRFR5305TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFR5305TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations