What is the Additional Feature ?

Name: IRFR4615TRLPBF
Brand: Infineon Technologies
SKU: IRFR4615TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFR4615TRLPBF

Part No.:: IRFR4615TRLPBF

Manufacturer:: Infineon Technologies

Package:: D-Pak

Datasheet:: IRFR4615TRLPBF.pdf

Description:: MOSFET N-CH 150V 33A DPAK

In Stock:: 3395

Quantity:: Add To Cart

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IRFR4615TRLPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
150 V
Current-ContinuousDrain(Id)@25°C:
33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
42mOhm @ 21A, 10V
Vgs(th)(Max)@Id:
5V @ 100µA
GateCharge(Qg)(Max)@Vgs:
26 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1750 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
144W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

IRFR4615TRLPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFR4615TRLPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFR4615TRLPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFR4615TRLPBF information

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IRFR4615TRLPBF Typical application Circuitry

IRFR4615TRLPBF

The IRFR4615TRLPBF, an integral component within the renowned HEXFET power MOSFET portfolio, stands out with its distinctive construction optimized for voltage switching and low on-resistance. This device is particularly compelling in applications requiring efficiency, power conservation, and high performance, common in the sphere of modern electronic design. When incorporating the IRFR4615TRLPBF into specific circuitries, precision in understanding its pin configuration and the subtleties of its integration is paramount.

1. Drain (D): The 'Drain' serves as the primary terminal through which the current flows to the load. Typically, it connects to the higher potential within the load setup, depending on whether the configuration is for a standard load switch or part of a more complex structure such as a power supply unit.

2. Gate (G): Acting as the command interface for the MOSFET's operation, the 'Gate' terminal controls the device's on/off states. This pin is where the input drive signal (usually a PWM signal) applies. Because MOSFETs are voltage-driven devices, it is essential to ensure that the gate-source voltage (Vgs) adheres to specified operational thresholds. Notably, integrating a current-limiting resistor to the gate control input can mitigate excessive inrush currents.

3. Source (S): The 'Source' terminal typically aligns with the circuit's lower potential, often connecting to the ground plane of the system. It is pivotal in completing the electrical path, which is necessary when the MOSFET is in a conducting state.

4. Enhanced Integration Protocols:

- Gate Protection Measures: To protect the IRFR4615TRLPBF's sensitive gate from potential electrostatic discharge (ESD) damage, it is advisable to connect a zener diode between the gate and source, ensuring the voltage does not exceed the maximum gate-source threshold.

- Optimized Switching Performance: Incorporating a gate resistor close to the IRFR4615TRLPBF's gate terminal can significantly refine the MOSFET's switching characteristics, reducing noise due to high di/dt and mitigating potential ringing.

- Thermal Management: The IRFR4615TRLPBF can generate operational heat under high current scenarios. Implementing efficient thermal management, such as using heat sinks or ensuring ample airflow, is critical to maintaining the MOSFET's longevity and reliability.

- Snubber Network: In applications dealing with high-voltage switching, a snubber circuit across the drain-source can be invaluable in suppressing voltage spikes caused by the inductive loads, thus protecting the IRFR4615TRLPBF.

- Comprehensive Verification: Post-assembly, it is crucial to subject the circuit to a thorough functional verification phase under controlled conditions. This step is to confirm the IRFR4615TRLPBF's operational integrity and the circuit's overall performance compliance.

In essence, utilizing the IRFR4615TRLPBF within electronic configurations necessitates a detailed approach, ranging from strategic pin connections to adopting defensive measures for ensuring the MOSFET's operational efficacy. The pivotal aspects, spanning from gate protection to thermal management, underscore the complexities involved in harnessing the full potential of the IRFR4615TRLPBF.

IRFR4615TRLPBF FAQ

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6. What is the process for return or replacement of IRFR4615TRLPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFR4615TRLPBF we delivered, we will accept the replacement or return of the IRFR4615TRLPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFR4615TRLPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations