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Infineon Technologies IRFR1205TRPBF

Part No.:: IRFR1205TRPBF

Manufacturer:: Infineon Technologies

Package:: D-Pak

Datasheet:: IRFR1205TRPBF.pdf

Description:: MOSFET N-CH 55V 44A DPAK

In Stock:: 3925

Quantity:: Add To Cart

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IRFR1205TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
55 V
Current-ContinuousDrain(Id)@25°C:
44A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
27mOhm @ 26A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
65 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1300 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
107W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

IRFR1205TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFR1205TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFR1205TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFR1205TRPBF information

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IRFR1205TRPBF Typical application Circuitry

IRFR1205TRPBF

A Power MOSFET transistor made especially for quick switching applications is the IRFR1205TRPBF. This component is widely used in power supply and management systems due to its efficiency and reliability. The "TRPBF" suffix indicates that the device is provided in tape and reel packaging for automated assembly processes and that it is lead-free (PbF).

Application Scenarios

The IRFR1205TRPBF is suitable for a variety of applications including DC-DC converters, motor drives, and high-efficiency power management systems in both consumer and industrial electronics. It is the perfect option for effective power conversion and control because of its low on-resistance and capacity to handle high currents and voltages.

Parameter Features

Key features of the IRFR1205TRPBF include:

- Drain-Source Voltage (Vds): It can handle significant voltage levels, making it suitable for various power applications.

- Continuous Drain Current (Id): It supports high current, facilitating its use in applications requiring high power.

- Rds(on): Exhibits low on-state resistance, which minimizes power losses and improves efficiency.

- Package: Comes in a D-Pak (TO-252) package, known for its compact size and good thermal performance.

Motor drive circuit as an example of a circuit connection

The IRFR1205TRPBF can be used in a motor drive application to regulate the direction and speed of a DC motor.

1. Gate Drive Connection: Attach a microcontroller or motor driver integrated circuit's PWM output to the gate pin (pin 1). Through altering the PWM signal's duty cycle, this signal regulates the MOSFET's switching and, consequently, the motor's speed.

2. Drain Connection to Motor: Attach the Drain pin (pin 2) to one terminal of the DC motor. This pin switches the motor's power supply under the control of the Gate signal.

3. Source to Ground Connection: Attach pin 3, the source, to the system ground. This completes the current path through the motor and MOSFET.

4. Flyback Diode: Place a diode (often called a flyback diode) across the motor terminals, with the anode connected to the Source side. This diode provides a path for the inductive kickback from the motor when the MOSFET turns off, protecting the IRFR1205TRPBF from voltage spikes.

5. Gate Resistor: To reduce the inrush current, connect a resistor in series with the gate. This component is essential for protecting the Gate oxide layer and controlling the switching characteristics.

Design Considerations

When designing a circuit with the IRFR1205TRPBF, several factors must be considered:

- Heat Dissipation: Ensure adequate cooling for the IRFR1205TRPBF, as power dissipation can lead to high junction temperatures, especially in high-current applications.

- Gate Drive Voltage: The Gate drive voltage must be chosen to fully enhance the MOSFET while not exceeding the maximum Gate-Source voltage to prevent damage.

- Switching Speed: Optimize the switching speed to balance efficiency and EMI. Faster switching reduces losses but can increase EMI.

- Protection Mechanisms: Implement over-current, over-voltage, and thermal protection to enhance system reliability and prevent damage to the IRFR1205TRPBF and the motor.

By carefully considering these design aspects and correctly implementing the IRFR1205TRPBF in a motor drive circuit, designers can achieve efficient, reliable, and controlled motor operation, suitable for a wide range of applications from industrial automation to consumer electronics.

IRFR1205TRPBF FAQ

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3. Are the IRFR1205TRPBF price and inventory displayed accurate?

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6. What is the process for return or replacement of IRFR1205TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFR1205TRPBF we delivered, we will accept the replacement or return of the IRFR1205TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFR1205TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations