What is the Additional Feature ?

Name: IRFP4368PBF
Brand: Infineon Technologies
SKU: IRFP4368PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFP4368PBF

Part No.:: IRFP4368PBF

Manufacturer:: Infineon Technologies

Package:: TO-247AC

Datasheet:: IRFP4368PBF.pdf

Description:: MOSFET N-CH 75V 195A TO247AC

In Stock:: 3642

Quantity:: Add To Cart

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IRFP4368PBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
75 V
Current-ContinuousDrain(Id)@25°C:
195A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
1.85mOhm @ 195A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
570 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
19230 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
520W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRFP4368PBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFP4368PBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFP4368PBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFP4368PBF information

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IRFP4368PBF Typical application Circuitry

IRFP4368PBF

The IRFP4368PBF, part of Infineon's esteemed HEXFET power MOSFET portfolio, has made a substantial mark in the realm of high-efficiency and high-current applications, thanks to its low on-resistance and superior switching performance. This particular component, encapsulated in a TO-247AC package, facilitates substantial current handling with minimal heat dissipation issues. When integrating the IRFP4368PBF into a circuit, an in-depth understanding of its pin configuration and connection methodology is paramount for harnessing its full capabilities.

1. Gate (G): The Gate is the control terminal that triggers the MOSFET's switching characteristics. The gate voltage (Vgs) determines whether the MOSFET is on or off. It's imperative to connect a gate drive circuit to modulate the Vgs for turning the MOSFET on or off as desired. This gate drive can come from a dedicated driver IC, a microcontroller, or a pulse transformer, depending on the application's complexity and requirements.

2. Drain (D): The Drain terminal is where the main current flows through, depending on the MOSFET's state (on or off). For a typical load-switching application, the drain connects directly to the load, and from there, the current flows to the source, completing the circuit. It's crucial to ensure the voltage across the drain-to-source (Vds) does not exceed the maximum specified limits to prevent catastrophic failure.

3. Source (S): The Source pin serves as the gate voltage reference and the drain current exit route. In most configurations, the source connects to the system ground. In certain applications, a sense resistor might be placed between the source pin and ground to monitor the current through the MOSFET, providing feedback for overcurrent protection mechanisms.

4. Key Integration Principles:

- Gate Protection: Integrate gate resistors to prevent high-frequency oscillations and possibly a zener diode to clamp the gate-source voltage, protecting the IRFP4368PBF from voltage spikes that might exceed the maximum Vgs rating.

- Thermal Management: For high-current applications, the IRFP4368PBF requires substantial heat sinking and, possibly, forced air cooling. Good thermal design will prevent the MOSFET from reaching temperatures that could trigger thermal runaway situations.

- Snubber Networks: Especially in inductive load switching, implement snubber networks across the drain and source to suppress voltage spikes caused by inductive kickback, enhancing the IRFP4368PBF's operational reliability.

- Safe Operating Area (SOA): Respect the component's SOA as per the datasheet to avoid pushing the MOSFET into conditions it's not designed to handle, particularly in high-current, high-frequency, or high-voltage applications.

Implementing the IRFP4368PBF in electronic designs involves a blend of thorough understanding, precision, and respect for the component's operational boundaries. It's paramount that professionals integrating these MOSFETs into their designs consult and adhere to the guidelines and specifications outlined in the IRFP4368PBF datasheet. This practice ensures the realization of robust, efficient, and reliable system applications.

IRFP4368PBF FAQ

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3. Are the IRFP4368PBF price and inventory displayed accurate?

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6. What is the process for return or replacement of IRFP4368PBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFP4368PBF we delivered, we will accept the replacement or return of the IRFP4368PBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFP4368PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations