What is the Additional Feature ?

Name: IRFM120ATF
Brand: onsemi
SKU: IRFM120ATF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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onsemi IRFM120ATF

Part No.:: IRFM120ATF

Manufacturer:: onsemi

Package:: SOT-223-4

Datasheet:: IRFM120ATF.pdf

Description:: MOSFET N-CH 100V 2.3A SOT223-4

In Stock:: 30098

Quantity:: Add To Cart

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IRFM120ATF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
2.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
200mOhm @ 1.15A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
22 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
480 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
2.4W (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRFM120ATF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFM120ATF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFM120ATF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFM120ATF information

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IRFM120ATF Typical application Circuitry

The IRFM120ATF, emerging from the famed HEXFET® series by International Rectifier, is an N-channel power MOSFET lauded for its energy-efficient characteristics and impressive power handling abilities. Crafted with advanced silicon technology, the IRFM120ATF combines swift switching capabilities with a compact design footprint, making it a go-to for a multitude of applications. In this exploration, we will illuminate the intrinsic pin details of the IRFM120ATF and elucidate the nuances of integrating it into circuits.

1. Gate (G): The gate terminal, being the primary control mechanism, facilitates the turning on and off of the MOSFET. To harness the capabilities of the IRFM120ATF, this pin connects directly to the control or PWM (pulse width modulation) signal. Employing a gate resistor is recommended to prevent overshoots and high-frequency oscillations. Additionally, a pull-down resistor can be used to ensure the MOSFET remains off during transient or undefined states.

2. Drain (D): This terminal serves as the main current channel when the IRFM120ATF is activated. Depending on the application, the drain connects to the load, effectively transferring power through the MOSFET when it's in the "on" state. For high-side configurations, the drain typically connects to the positive side of the load, whereas for low-side configurations, it links to the load's negative terminal.

3. Source (S): Often tied to the reference ground in most applications, the source provides the return path for the current. In a high-side configuration, this terminal attaches to the load, whereas, in a low-side setup, it connects directly to the circuit's ground.

4. Refined Connection Tips:

- Gate Protection: Protecting the sensitive gate of the IRFM120ATF is paramount. A zener diode, strategically placed between the gate and source, can shield the MOSFET from voltage transients that may exceed the threshold and potentially damage the device.

- Heat Dissipation: To maintain optimal performance and enhance the IRFM120ATF's longevity, ensure efficient heat dissipation. Depending on the current load and application, a heat sink may be necessary to draw away excess thermal energy.

- Inclusion of a Flyback Diode: If the IRFM120ATF is managing inductive loads, integrating a flyback diode across the load can circumvent potentially damaging voltage spikes caused by sudden load changes.

- Conduct Comprehensive Tests: Once integrated, conduct detailed tests in a controlled environment. Such evaluations validate that the IRFM120ATF functions seamlessly within the defined parameters and safeguards against potential anomalies.

In summation, the IRFM120ATF is a testament to the impeccable engineering of the HEXFET® series, presenting a robust solution for myriad power applications. When integrating this MOSFET, a marriage of intricate understanding and precise execution is essential. For advanced implementations, it's paramount to consult the IRFM120ATF datasheet, ensuring adherence to prescribed specifications and maximizing the device's potential.

IRFM120ATF FAQ

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6. What is the process for return or replacement of IRFM120ATF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFM120ATF we delivered, we will accept the replacement or return of the IRFM120ATF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFM120ATF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations