What is the Additional Feature ?

Name: IRFH7440TRPBF
Brand: Infineon Technologies
SKU: IRFH7440TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFH7440TRPBF

Part No.:: IRFH7440TRPBF

Manufacturer:: Infineon Technologies

Package:: 8-PQFN (5x6)

Datasheet:: IRFH7440TRPBF.pdf

Description:: MOSFET N-CH 40V 85A 8PQFN

In Stock:: 3109

Quantity:: Add To Cart

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IRFH7440TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
HEXFET®, StrongIRFET™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
40 V
Current-ContinuousDrain(Id)@25°C:
85A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
2.4mOhm @ 50A, 10V
Vgs(th)(Max)@Id:
3.9V @ 100µA
GateCharge(Qg)(Max)@Vgs:
138 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
4574 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
104W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRFH7440TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFH7440TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFH7440TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFH7440TRPBF information

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IRFH7440TRPBF Typical application Circuitry

IRFH7440TRPBF

The IRFH7440TRPBF, under the umbrella of International Rectifier's HEXFET Power MOSFET lineup, is a distinguished N-channel device celebrated for its high-speed switching capabilities and minimized power losses. Tailored for efficient operations and minimalistic designs, the IRFH7440TRPBF has proven its mettle in modern power electronics applications. The pin assignments and their interface become crucial as we go deeper into the details of this component.

1. Drain (D): Acting as the exit point for the current flow, the Drain typically attaches to the positive terminal of the load. In switching topologies, this connection might vary based on whether the MOSFET operates as a high-side or low-side switch.

2. Gate (G): The Gate acts as the IRFH7440TRPBF's control terminal. Attach this pin to the output of the driving circuitry, like PWM controllers or microcontrollers. Given its sensitivity, implementing a gate resistor in series is advisable, as it mitigates potential oscillations and offers protection against transients.

3. Source (S): Serving as the current entry terminal, the Source connects directly to the circuit's common ground, especially when the IRFH7440TRPBF functions as a low-side switch.

4. PGND (Power Ground): This pin is essentially an extension of the Source, ensuring optimal performance. To diminish parasitic inductances and guarantee optimal switching performances, bond the PGND closely with the Source pin to the circuit's primary ground plane.

5. TGND (Thermal Ground): To aid in efficient heat dissipation and ensure the IRFH7440TRPBF remains within its thermal limits, this pin should establish a strong connection to the system's ground. Employing a thermal pad or enhanced grounding techniques can optimize heat dissipation.

6. Insightful Integration Suggestions:

- Protection Agenda: Couple the Gate with a zener diode pointing towards the Source. This design choice clamps the gate voltage, preventing potential over-voltages from damaging the IRFH7440TRPBF.

- Efficient Cooling: Heat generation can affect the MOSFET's longevity. Utilizing thermal pads, heat sinks, or other cooling techniques can aid in maintaining temperature stability.

- Bootstrapping for High-Side Drive: If employing the IRFH7440TRPBF as a high-side switch, consider a bootstrapping arrangement. This setup ensures the Gate voltage exceeds the Source, enabling the MOSFET to turn on efficiently.

Incorporating the IRFH7440TRPBF in electronic architectures mandates a blend of precision and comprehension. Recognized for its robust performance and energy efficiency, this component enriches a plethora of power applications. It's imperative for circuit designers to heed the specifications detailed in the IRFH7440TRPBF datasheet, ensuring a seamless marriage of the component within its intended application.

IRFH7440TRPBF FAQ

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6. What is the process for return or replacement of IRFH7440TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFH7440TRPBF we delivered, we will accept the replacement or return of the IRFH7440TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFH7440TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations