What is the Additional Feature ?

Name: IRFB5615PBF
Brand: Infineon Technologies
SKU: IRFB5615PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFB5615PBF

Part No.:: IRFB5615PBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRFB5615PBF.pdf

Description:: MOSFET N-CH 150V 35A TO220AB

In Stock:: 580

Quantity:: Add To Cart

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IRFB5615PBF Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
150 V
Current-ContinuousDrain(Id)@25°C:
35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
39mOhm @ 21A, 10V
Vgs(th)(Max)@Id:
5V @ 100µA
GateCharge(Qg)(Max)@Vgs:
40 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1750 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
144W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRFB5615PBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFB5615PBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFB5615PBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFB5615PBF information

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IRFB5615PBF Typical application Circuitry

IRFB5615PBF

The IRFB5615PBF, hailing from International Rectifier's distinguished HEXFET® Power MOSFET series, is an N-channel device lauded for its exceptional energy efficiency and robustness. Its design benefits from the innovative HEXFET technology, ensuring top-tier performance characterized by low on-resistance and swift switching dynamics.

1. Drain (D): The Drain terminal acts as the channel through which current flows towards the connected load. In most configurations, the Drain is linked to the positive terminal of the load, whilst the other end of the load is attached either to the ground (for low-side switching) or to the supply's positive rail (for high-side switching).

2. Gate (G): The Gate terminal is the heart of the IRFB5615PBF's control mechanism. It decides whether the MOSFET is conducting or non-conducting. Applying a voltage to the Gate in proportion to the Source will reveal the MOSFET's condition. A voltage within the threshold region activates the device, while zero or negative voltage keeps it off. Often, a resistor is strategically placed in series with the Gate, referred to as a "gate resistor", which controls the rate of voltage change and thereby modulates the switching behavior.

3. Source (S): Typically acting as the MOSFET's ground reference, the Source pin is connected directly to the ground in low-side switching configurations. When it comes to high-side switching mechanisms, the Source is instead connected to the load.

4. Sage Recommendations for Optimal Performance:

- Gate Protection Strategy: Transient voltages can be perilous for the IRFB5615PBF. To protect against such unforeseen spikes, integrate a zener diode across the Gate and Source. This arrangement ensures that the Gate voltage doesn't exceed the MOSFET's safe limits.

- Thermal Considerations: The IRFB5615PBF can amass significant heat during demanding operations. Adequate heat dissipation provisions, such as heat sinks, are essential to maintaining operational longevity and reliability.

- Bootstrap Circuitry: When employing the IRFB5615PBF in high-side switching applications, it's often necessary to utilize a bootstrap circuit to drive the Gate adequately above the Source voltage.

- Drive Circuitry: The IRFB5615PBF benefits from robust gate drive circuitry to ensure rapid and efficient switching, minimizing transition loss.

In summation, harnessing the full prowess of the IRFB5615PBF in electronic systems demands precision, a solid grasp of its features, and adherence to best practices. Always reference the device's datasheet for specific parameters and guidelines. Ensuring the correct setup and honoring the technical intricacies associated with the IRFB5615PBF will pave the way for a reliable, high-performing circuit design.

IRFB5615PBF FAQ

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3. Are the IRFB5615PBF price and inventory displayed accurate?

The price and inventory of IRFB5615PBF fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of IRFB5615PBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB5615PBF we delivered, we will accept the replacement or return of the IRFB5615PBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB5615PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations