What is the Additional Feature ?

Name: IRFB4227PBF
Brand: Infineon Technologies
SKU: IRFB4227PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFB4227PBF

Part No.:: IRFB4227PBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRFB4227PBF.pdf

Description:: MOSFET N-CH 200V 65A TO220AB

In Stock:: 2107

Quantity:: Add To Cart

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IRFB4227PBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
200 V
Current-ContinuousDrain(Id)@25°C:
65A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
24mOhm @ 46A, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
98 nC @ 10 V
Vgs(Max):
±30V
InputCapacitance(Ciss)(Max)@Vds:
4600 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
330W (Tc)
OperatingTemperature:
-40°C ~ 175°C (TJ)
MountingType:
Through Hole

IRFB4227PBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFB4227PBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFB4227PBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFB4227PBF information

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IRFB4227PBF Typical application Circuitry

IRFB4227PBF

Renowned for its proficiency in high-power applications, the IRFB4227PBF is an N-channel power MOSFET that stems from International Rectifier's respected HEXFET® product line. Offering a blend of low on-resistance and swift switching capabilities, the IRFB4227PBF is especially suited for energy-efficient scenarios. This component finds its roots in an advanced silicon technology, designed to optimize performance and reduce power losses. Here's an in-depth look at the IRFB4227PBF, elucidating its series and the granularities of its circuit connections.

1. Gate (G): As the command center of the MOSFET, the Gate controls the device's switching states. By applying a voltage relative to the Source pin, one can regulate the flow of current between Drain and Source. Typically, this voltage comes from a microcontroller, pulse-width modulation (PWM) driver, or similar control mechanism. To mitigate undesired oscillations and promote signal clarity, a gate resistor (usually in the range of 10Ω to 100Ω) is commonly introduced between the control source and the Gate of the IRFB4227PBF.

2. Drain (D): This is the main current-carrying terminal, and it typically connects to one end of the load. Depending on the MOSFET's usage as either a high-side or low-side switch, the other side of the load will connect to the positive supply rail or ground, respectively.

3. Source (S): Functioning as the reference point and return path for current, the Source pin often connects directly to ground in low-side switching configurations. In high-side switching scenarios, however, the Source connects to the load, and the Drain ties to the positive supply rail.

4. Strategic Considerations for Circuit Implementation:

- Suppressing Parasitics: Especially pivotal for the IRFB4227PBF in high-frequency applications, a small ceramic capacitor (like 100nF) across the Drain and Source can dampen oscillations and snub potential voltage spikes.

- Gate Protection: Integrate a zener diode between the Gate and Source. By doing so, you ensure that the gate-source voltage of the IRFB4227PBF never surpasses the maximum rating, thus averting potential damage.

- Thermal Aspects: The IRFB4227PBF, when operating at high currents, can generate substantial heat. Engineers should employ heat sinks and maintain effective thermal management to ensure the MOSFET remains within its operating temperature range.

- Safe Initialization: Utilize a pull-down resistor on the Gate pin. This ensures that, during moments of system inactivity or initial power-up, the MOSFET remains off until it receives an explicit "on" command.

To sum it up, the IRFB4227PBF stands as a paragon of the HEXFET® family's virtues: efficiency, reliability, and performance optimization. When integrating this component into any circuit, a detailed examination of its datasheet is paramount to ensure alignment with the stipulated electrical parameters. In the realm of power electronics, the IRFB4227PBF truly is a cornerstone, and understanding its nuances is crucial for any application seeking to harness its power.

IRFB4227PBF FAQ

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6. What is the process for return or replacement of IRFB4227PBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB4227PBF we delivered, we will accept the replacement or return of the IRFB4227PBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB4227PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations