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Name: IRFB4110PBF
Brand: Infineon Technologies
SKU: IRFB4110PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFB4110PBF

Part No.:: IRFB4110PBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRFB4110PBF.pdf

Description:: MOSFET N-CH 100V 120A TO220AB

In Stock:: 4880

Quantity:: Add To Cart

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IRFB4110PBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
4.5mOhm @ 75A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
210 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
9620 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
370W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRFB4110PBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFB4110PBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFB4110PBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFB4110PBF information

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IRFB4110PBF Typical application Circuitry

IRFB4110PBF

The IRFB4110PBF is a renowned semiconductor device, hailing from International Rectifier's HEXFET Power MOSFET lineage. Esteemed for its optimal balance between conduction and switching losses, this N-channel MOSFET is particularly tailored for high-frequency applications, ensuring efficient power management. With the intention of harnessing the full capabilities of the IRFB4110PBF, it is quintessential to comprehend its pin dynamics and establish adept circuit integrations.

1. Gate (G): Acting as the MOSFET's control node, the gate terminal regulates the device's on and off states. Interface it to the control circuit or microcontroller output that dictates the switching command. An in-line resistor, aptly termed the "gate resistor," can be strategically positioned to mollify potential oscillations and modulate the gate's switching behavior.

2. Drain (D): The drain, being the chief current exit route, should associate directly with the segment of the load destined to be controlled. Depending on the configuration-high-side or low-side switching-the drain can either bond with the load's positive lead or fuse directly to the power supply's positive terminal.

3. Source (S): Customarily tethered to the system's ground in typical low-side switch configurations, the source pin ensures the current's seamless return path. However, in high-side arrangements, it integrates directly with the negative end of the load.

4. Advanced Recommendations for Circuit Integration:

- Gate Voltage Management: Given the IRFB4110PBF's intrinsic capacity to react to gate voltages, integrating a pull-down resistor on the gate is advisable. This step guarantees the MOSFET's default "off" stance in the absence of an explicit control signal.

- Overvoltage Safeguarding: Employ a zener diode spanning the gate and source terminals. This protective measure is designed to curtail the gate voltage, ensuring it remains ensconced within the stipulated thresholds of the IRFB4110PBF.

- Heat Dissipation Protocol: In scenarios where the IRFB4110PBF processes substantial currents, thermal buildup is a tangible concern. Implementing heat sinks, and factoring in the ambient thermal environment, is pivotal to the device's longevity and functional reliability.

- Operational Verification: Upon circuit integration, instigate a systematic examination of the setup under moderated power conditions. This preemptive step is geared towards confirming the seamless operation of the IRFB4110PBF and the overarching circuitry.

To culminate, the IRFB4110PBF, with its formidable HEXFET pedigree, stands as a testament to technological advancements in power electronics. The meticulous integration of this MOSFET into circuitry demands a blend of technical acumen and precision. By referencing the dedicated datasheet of the IRFB4110PBF and upholding the delineated electrical parameters, designers are poised to extract the utmost performance from this semiconductor marvel.

IRFB4110PBF FAQ

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3. Are the IRFB4110PBF price and inventory displayed accurate?

The price and inventory of IRFB4110PBF fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of IRFB4110PBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB4110PBF we delivered, we will accept the replacement or return of the IRFB4110PBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB4110PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations