What is the Additional Feature ?

Name: IRFB4020PBF
Brand: Infineon Technologies
SKU: IRFB4020PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFB4020PBF

Part No.:: IRFB4020PBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRFB4020PBF.pdf

Description:: MOSFET N-CH 200V 18A TO220AB

In Stock:: 9953

Quantity:: Add To Cart

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IRFB4020PBF Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
200 V
Current-ContinuousDrain(Id)@25°C:
18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
100mOhm @ 11A, 10V
Vgs(th)(Max)@Id:
4.9V @ 100µA
GateCharge(Qg)(Max)@Vgs:
29 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1200 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
100W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRFB4020PBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFB4020PBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFB4020PBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFB4020PBF information

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IRFB4020PBF Typical application Circuitry

IRFB4020PBF

The IRFB4020PBF is an integral component from International Rectifier's acclaimed HEXFET® series of power MOSFETs. Recognized for its exceptional current carrying capacity and minimal on-resistance, the IRFB4020PBF epitomizes the advances made in MOSFET technology. Deployed in a variety of high-performance applications, this device encapsulates the synthesis of durability and efficiency. To achieve the utmost performance from the IRFB4020PBF, it's imperative to comprehend its pin configuration and the nuances of circuit integration.

1. Gate (G): The gate terminal is the primary control interface. It modulates the MOSFET's conductive state, determining whether it allows current to pass between the drain and source. The gate should connect to the control or PWM (Pulse Width Modulation) signal from your driver circuitry. It's worth noting that a resistor (often termed a 'gate resistor') can be placed in series to regulate the switching characteristics, mitigating potential oscillations and overshoot.

2. Drain (D): This terminal signifies the exit point of current in the MOSFET. A common application places the load between your supply voltage's positive terminal and drain. The drain's connectivity path depends on whether the MOSFET functions as a high-side or low-side switch.

3. Source (S): Conventionally representing the MOSFET's current entry point, the source terminal typically connects to the circuit ground when the IRFB4020PBF is employed as a low-side switch. For high-side configurations, it's linked to the load.

4. Supplementary Circuit Integration Techniques:

- Gate Protection: The gate of the IRFB4020PBF is susceptible to electrostatic discharge. Integrate a zener diode between the gate and source terminals to safeguard against unforeseen voltage spikes, ensuring the voltage remains within permissible limits.

- Flyback Diode: If the MOSFET controls an inductive load (like motors or solenoids), incorporate a diode parallel to the load to counter voltage spikes generated upon switching.

- Thermal Management: The IRFB4020PBF, though proficient, can produce significant thermal output under intense load conditions. Attach a heatsink to the tab (which is also connected to the drain) to bolster heat dissipation.

- Grounding Precision: Ensure a low-resistance and direct connection from the source pin to the circuit ground. This precaution optimizes the IRFB4020PBF's performance and augments the accuracy of any current sensing implementations.

5. Circuit Validation: Once the IRFB4020PBF's integration is completed, a series of diagnostic tests at conservative power levels is advised, safeguarding against potential oversights and enhancing the overall robustness of the design.

In summation, the IRFB4020PBF embodies the zenith of MOSFET technology, proffering both versatility and resilience. As with any precision electronic component, meticulous adherence to datasheet specifications and circumspect circuit design will unlock the full potential of the IRFB4020PBF, ensuring it stands as a lynchpin in any electronic solution.

IRFB4020PBF FAQ

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3. Are the IRFB4020PBF price and inventory displayed accurate?

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6. What is the process for return or replacement of IRFB4020PBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB4020PBF we delivered, we will accept the replacement or return of the IRFB4020PBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB4020PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations