What is the Additional Feature ?

Name: IRFB38N20DPBF
Brand: Infineon Technologies
SKU: IRFB38N20DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFB38N20DPBF

Part No.:: IRFB38N20DPBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRFB38N20DPBF.pdf

Description:: MOSFET N-CH 200V 43A TO220AB

In Stock:: 2082

Quantity:: Add To Cart

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IRFB38N20DPBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
200 V
Current-ContinuousDrain(Id)@25°C:
43A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
54mOhm @ 26A, 10V
Vgs(th)(Max)@Id:
5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
91 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
2900 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
3.8W (Ta), 300W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRFB38N20DPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFB38N20DPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFB38N20DPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFB38N20DPBF information

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IRFB38N20DPBF Typical application Circuitry

IRFB38N20DPBF

The IRFB38N20DPBF is a Power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It's well-suited for tasks that require handling high currents and voltages with minimal loss, such as in power supplies, motor controls, and DC-DC converters.

Application Scenarios

The IRFB38N20DPBF is versatile and can be used in various scenarios including renewable energy systems like solar inverters, high-efficiency power supplies, and electronic load applications. Its high current and voltage handling capabilities make it an ideal choice for applications requiring robust power management.

Parameter Features

Key features of the IRFB38N20DPBF include:

- Drain-Source Voltage (Vds): It can handle high voltage levels, which makes it suitable for a wide range of power applications.

- Continuous Drain Current (Id): Supports high current, enabling it to drive large loads efficiently.

- Rds(on): Features low on-state resistance, ensuring minimal power loss during operation, which enhances overall efficiency.

- Package: Encased in a TO-220 package, known for its good thermal dissipation characteristics.

Circuit Connection Example: High-Efficiency Power Supply

In a high-efficiency power supply application, the IRFB38N20DPBF can serve as the main switching element in a buck converter topology.

1. Gate Drive Connection: Connect the Gate pin (pin 1) to the output of a PWM controller. This controller adjusts the duty cycle based on the required output voltage, controlling the MOSFET's on-off state to regulate the power supply's output.

2. Drain Connection to Input Voltage: Attach the Drain pin (pin 2) to the high voltage input source. This pin is the main current path during the MOSFET's on-state and needs to be connected to a high-current-capable trace or terminal.

3. Source Connection to Ground: Link the Source pin (pin 3) to the power supply ground. This connection is crucial for completing the circuit path and is typically connected to a large ground plane to handle the return current efficiently.

4. Bootstrap Diode and Capacitor: For the gate drive circuit, include a bootstrap diode and capacitor if using a high-side driver. This setup provides the necessary gate voltage relative to the Source, which is essential for fully enhancing the MOSFET.

5. Output Inductor and Capacitor: Connect an inductor from the Drain to the output load, followed by a filter capacitor to ground. This LC filter smooths out the PWM pulses to a stable DC output.

Design Considerations

When designing with the IRFB38N20DPBF, several key aspects should be considered:

- Thermal Management: Adequate cooling, possibly with a heatsink, is necessary to dissipate heat generated by the MOSFET, especially at high currents, to prevent thermal runaway.

- Gate Drive Circuitry: Ensure the gate driver can provide sufficient voltage and current to quickly switch the IRFB38N20DPBF on and off, minimizing transition losses.

- Parasitic Inductances: Minimize parasitic inductances in the circuit layout, especially in the gate circuit and the high-current paths, to reduce voltage overshoots and ringing during switching.

- Protection Features: Implement protection mechanisms like over-current, over-voltage, and thermal shutdown to safeguard the IRFB38N20DPBF and the overall circuit from abnormal conditions.

By meticulously considering these design aspects and effectively employing the IRFB38N20DPBF in a high-efficiency power supply circuit, designers can achieve optimal performance, reliability, and efficiency, catering to the demands of modern electronic devices and systems.

IRFB38N20DPBF FAQ

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6. What is the process for return or replacement of IRFB38N20DPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB38N20DPBF we delivered, we will accept the replacement or return of the IRFB38N20DPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB38N20DPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations