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Name: IRFB3306PBF
Brand: Infineon Technologies
SKU: IRFB3306PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFB3306PBF

Part No.:: IRFB3306PBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRFB3306PBF.pdf

Description:: MOSFET N-CH 60V 120A TO220AB

In Stock:: 11574

Quantity:: Add To Cart

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IRFB3306PBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
4.2mOhm @ 75A, 10V
Vgs(th)(Max)@Id:
4V @ 150µA
GateCharge(Qg)(Max)@Vgs:
120 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
4520 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
230W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRFB3306PBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFB3306PBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFB3306PBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFB3306PBF information

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IRFB3306PBF Typical application Circuitry

The IRFB3306PBF is a significant component of the renowned HEXFET® Power MOSFET lineup, acclaimed for their advanced performance in efficient power conversion and switching. This N-channel MOSFET is specifically optimized for applications necessitating high current handling and fast switching capabilities, such as in power supply units, motor drives, and high-performance computing systems.

1. Voltage Compatibility (VDS): The IRFB3306PBF is adept at managing drain-source voltages up to 60V, providing a versatile solution for a broad array of power applications. In the circuit integration process, it is imperative to connect the drain (D) terminal to the load's high-voltage side, thereby enabling the IRFB3306PBF to regulate the power flow with high efficiency.

2. Gate Operation (VGS): The gate-source voltage (VGS) plays a pivotal role in controlling the IRFB3306PBF's conduction state. Precisely applying voltage to the gate (G) in relation to the source (S) allows for nuanced control over the device's switching behavior, essential for optimizing power modulation within the system.

3. Current Handling (ID): The IRFB3306PBF boasts an impressive capacity for conducting high drain currents, making it ideal for power-intensive applications. Ensuring a minimal resistance path from the drain (D) to the source (S) is crucial for leveraging the full potential of the IRFB3306PBF, thereby enhancing system performance and reducing energy losses.

4. Thermal Regulation (RθJC, RθJA): Effective thermal management is key to sustaining the IRFB3306PBF's performance, with its junction-to-case (RθJC) and junction-to-ambient (RθJA) thermal resistances indicative of its heat dissipation efficiency. Adopting suitable cooling strategies, such as the implementation of heat sinks, is essential to maintain the MOSFET within its safe operating temperature range, ensuring device reliability.

5. Device Durability (Avalanche Rating): The IRFB3306PBF is engineered with robust features, including an avalanche rating, to withstand voltage surges, thereby enhancing its durability and stability in challenging electrical conditions. This attribute ensures the MOSFET's reliability and longevity in demanding applications.

6. Switching Efficiency (Dynamic Characteristics): Characterized by its optimized switching attributes, the IRFB3306PBF is designed for high-efficiency operation, minimizing transition losses and improving overall system efficiency in scenarios requiring rapid switching, such as in pulse width modulation (PWM) applications.

7. Mounting and Soldering (Package Considerations): The packaging of the IRFB3306PBF is designed for seamless integration into PCBs, featuring a lead configuration that ensures efficient electrical and thermal connectivity. Adherence to recommended soldering techniques is paramount to maintain the MOSFET's functionality and durability within the circuit.

Integrating the IRFB3306PBF into electronic designs demands a deep understanding of its operational characteristics and a meticulous approach to circuit assembly. By attentively managing the connections to each terminal and addressing the device's thermal and dynamic needs, designers can effectively employ the IRFB3306PBF to boost the power management efficiency and reliability of their electronic systems.

IRFB3306PBF FAQ

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3. Are the IRFB3306PBF price and inventory displayed accurate?

The price and inventory of IRFB3306PBF fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of IRFB3306PBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB3306PBF we delivered, we will accept the replacement or return of the IRFB3306PBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB3306PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations