What is the Additional Feature ?

Name: IRFB3206PBF
Brand: Infineon Technologies
SKU: IRFB3206PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFB3206PBF

Part No.:: IRFB3206PBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRFB3206PBF.pdf

Description:: MOSFET N-CH 60V 120A TO220AB

In Stock:: 8820

Quantity:: Add To Cart

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IRFB3206PBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
3mOhm @ 75A, 10V
Vgs(th)(Max)@Id:
4V @ 150µA
GateCharge(Qg)(Max)@Vgs:
170 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
6540 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
300W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRFB3206PBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFB3206PBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFB3206PBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFB3206PBF information

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IRFB3206PBF Typical application Circuitry

The IRFB3206PBF stands as a distinguished component within International Rectifier's HEXFET® series, a collection that's renowned for its power MOSFETs designed with state-of-the-art technology. Prominent for its remarkable efficiency and exemplary switching performance, the IRFB3206PBF is a testament to advancements in semiconductor design, playing a crucial role in modern power electronics applications.

1. Gate (G):

- Acting as the command center of the IRFB3206PBF, the Gate pin determines the MOSFET's conductive status. Control signals, stemming either from microcontrollers or pulse generators, dock here.

- It's astute to introduce a resistor right at this juncture, bridging the Gate and the controlling entity, to temper the gate charge/discharge rate, averting potential ringing or oscillations.

2. Drain (D):

- The Drain is the main current passage, leading the flow either towards a load or a subsequent stage in the application.

- Attach the Drain directly to the segment of the circuit that will be switched on/off by the IRFB3206PBF. Depending on configuration, this might be a motor, LED array, or other power-consuming components.

3. Source (S):

- Often anchored to the circuit's ground plane, the Source pin channels the current back after it's passed through the load.

- For measurement and protective endeavors, one might integrate a small resistor between the Source and Ground, thereby monitoring the current passing through the MOSFET, though this is more typical in sensitive applications.

4. Constructive Suggestions:

- Gate's Defensive Strategy: The vulnerability of the Gate to potential electrostatic discharge (ESD) incidents warrants a protective mechanism. Implementing a zener diode across the Gate and Source pins of the IRFB3206PBF can serve as a shield, curtailing excessive voltage exposure.

- Optimizing Heat Dissipation: With power operation, the IRFB3206PBF may generate notable heat. Deploy a heatsink, if necessary, tailored to the MOSFET's thermal specifications. An effective heat management system may keep a component's efficiency and life much longer.

- Monitoring the Circuit: Once the IRFB3206PBF is soldered and connections are fortified, undertake a comprehensive circuit evaluation. This assessment, performed under calibrated conditions, ensures the MOSFET's integration aligns with the intended functionality and performance benchmarks.

In the realm of power electronics, the IRFB3206PBF stands as a paragon of robustness and efficiency. When integrating this MOSFET into circuits, designers ought to meticulously reference its datasheet, ensuring their applications mirror the optimal conditions specified for the IRFB3206PBF. The marriage of expertise with precision can fully harness the power and reliability this component promises.

IRFB3206PBF FAQ

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6. What is the process for return or replacement of IRFB3206PBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB3206PBF we delivered, we will accept the replacement or return of the IRFB3206PBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB3206PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations