What is the Additional Feature ?

Name: IRFB3077PBF
Brand: Infineon Technologies
SKU: IRFB3077PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRFB3077PBF

Part No.:: IRFB3077PBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRFB3077PBF.pdf

Description:: MOSFET N-CH 75V 120A TO220AB

In Stock:: 4916

Quantity:: Add To Cart

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IRFB3077PBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
75 V
Current-ContinuousDrain(Id)@25°C:
120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
3.3mOhm @ 75A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
220 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
9400 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
370W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRFB3077PBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRFB3077PBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRFB3077PBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRFB3077PBF information

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IRFB3077PBF Typical application Circuitry

The IRFB3077PBF, part of International Rectifier's esteemed HEXFET power MOSFET lineup, is an N-channel device known for its high efficiency and power density, which are critical in minimizing energy loss during power conversion processes. Emphasizing low on-resistance and fast switching capabilities, the IRFB3077PBF is instrumental in enhancing system reliability in a plethora of high-demand applications.

1. Gate (G): The Gate terminal acts as the command center, dictating the MOSFET's operational states. It's connected to the output signal (often PWM) from the control circuitry. Incorporating a gate resistor in this connection is advised to restrain inrush currents and mitigate oscillations during transitions. This tactic is crucial in maintaining system stability.

2. Drain (D): The Drain pin, being the MOSFET's primary outlet for current, attaches either directly to the positive terminal of the power supply (in high-side switch configurations) or to the load's positive end (in low-side switch deployments).

3. Source (S): In a classic low-side switch arrangement, the Source pin fastens securely to the ground. Contrastingly, in high-side applications, it connects to the load's negative terminal.

4. Crafting a Robust and Efficient Circuit:

- Ensuring Gate Protection: Protecting the IRFB3077PBF's Gate against excessive voltage is pivotal. Employing a zener diode between the gate and source can help regulate the voltage experienced by the gate, safeguarding it from spikes that exceed the MOSFET's maximum Vgs rating.

- Facilitating Swift Turn-off: Including a "pull-down" resistor between the gate and source (when the gate drive is floating) ensures the IRFB3077PBF turns off swiftly, aiding in preventing undesired activations.

- Optimizing Thermal Performance: High current scenarios necessitate effective heat management solutions. Integrating a heat sink with the IRFB3077PBF's package and ensuring adequate airflow are prudent steps in maintaining a permissible operating temperature, thus enhancing the MOSFET's lifespan and reliability.

- Circuit Prototyping and Testing: Constructing an initial prototype and subjecting it to a series of practical tests is vital. This phase allows for the observation of the IRFB3077PBF's behavior in real-world scenarios, enabling adjustments before finalizing the design.

By understanding the IRFB3077PBF's characteristics and observing these detailed connection guidelines, one can effectively harness the MOSFET's full potential. Given the component's significance in high-performance environments, following best practices for circuit design and assembly is paramount. To this end, consulting the IRFB3077PBF datasheet for nuanced specifications and operating boundaries is a fundamental step in the successful incorporation of this power MOSFET into broader electronic innovations.

IRFB3077PBF FAQ

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3. Are the IRFB3077PBF price and inventory displayed accurate?

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6. What is the process for return or replacement of IRFB3077PBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFB3077PBF we delivered, we will accept the replacement or return of the IRFB3077PBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRFB3077PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations