IRF9540NSTRLPBF

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Infineon Technologies IRF9540NSTRLPBF

HIGH-RELIABILITY-COMPONENTS
Part No.:
IRF9540NSTRLPBF
Manufacturer:
Infineon Technologies
Package:
D2PAK
Datasheet:
IRF9540NSTRLPBF.pdf
Description:
MOSFET P-CH 100V 23A D2PAK
In Stock:
3392
Quantity:
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  • Purchase and inquiryPurchase and inquiry

    IRF9540NSTRLPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF9540NSTRLPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF9540NSTRLPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    IRF9540NSTRLPBF informationIRF9540NSTRLPBF information

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    IRF9540NSTRLPBF Typical application Circuitry

    IRF9540NSTRLPBF

    The IRF9540NSTRLPBF is a renowned P-channel enhancement mode power MOSFET from the HEXFET series by International Rectifier. Harnessing state-of-the-art processing techniques, this MOSFET delivers unparalleled efficiency and switch capabilities. The IRF9540NSTRLPBF is lauded for its low on-resistance and robust performance characteristics. The below guide unravels the intricacies of this device, detailing its pin configuration and offering insightful recommendations for integrating the IRF9540NSTRLPBF into your circuits.

    1. Circuit Integration Instructions:

    - Gate (G): This terminal is the linchpin in controlling the MOSFET's switching functionality. By applying a negative voltage to the gate relative to the source, the IRF9540NSTRLPBF transitions into a conducting state. Conversely, grounding the gate or tying it to the source results in the MOSFET's deactivation. A resistor, known as a gate resistor, is typically interposed between the controlling signal and the gate to protect the IRF9540NSTRLPBF against voltage spikes and to manage the switching characteristics.

    - Drain (D): The drain pin, being a P-channel MOSFET, is generally connected to the negative or ground terminal of the load. Depending on the application, the drain will either serve as the pathway for current into the load (common-source configuration) or away from the load (common-drain configuration).

    - Source (S): The source terminal, in most applications, connects to a positive supply voltage. It's paramount to ensure this connection is established with minimal resistance to maintain the IRF9540NSTRLPBF's performance efficacy.

    2. Additional Design Recommendations:

    - Gate Protection: To preserve the gate oxide layer and shield the IRF9540NSTRLPBF from potential over-voltage conditions, a zener diode can be positioned between the gate and source. This arrangement clamps the gate voltage to a safe level.

    - Pull-Up Resistor: Implementing a pull-up resistor on the gate ensures the MOSFET remains off during system start-up or when the control input is floating. This mechanism is pivotal in preventing unwanted activations of the IRF9540NSTRLPBF.

    - Flyback Diode: When interfacing with inductive loads, like motors or relays, integrating a flyback diode across the load safeguards the IRF9540NSTRLPBF from potentially damaging voltage spikes.

    - Heat Management: Despite its efficiency attributes, the IRF9540NSTRLPBF, like many power MOSFETs, can generate thermal output under substantial current loads. As such, it's prudent to equip the device with a suitable heat sink, keeping in mind the thermal resistance metrics to facilitate optimal heat dissipation.

    3. Operational Insight: While embedding the IRF9540NSTRLPBF in circuits, it's imperative to stay within the stipulated voltage and current limits as detailed in its datasheet. This not only extends the MOSFET's longevity but also ensures operational stability.

    In summary, the IRF9540NSTRLPBF stands as a testament to International Rectifier's commitment to quality and performance. When integrated with diligence, this P-channel MOSFET can remarkably enhance the efficiency and reliability of various electronic applications. As with all such components, ensuring adherence to the specifics outlined in the IRF9540NSTRLPBF datasheet and harnessing expert consultation when needed can make a world of difference in its deployment.

    IRF9540NSTRLPBF FAQ

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    6. What is the process for return or replacement of IRF9540NSTRLPBF?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF9540NSTRLPBF we delivered, we will accept the replacement or return of the IRF9540NSTRLPBF only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of IRF9540NSTRLPBF.

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    (1)Inform us within 90 days

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