What is the Additional Feature ?

Name: IRF840PBF-BE3
Brand: Vishay Siliconix
SKU: IRF840PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Vishay Siliconix IRF840PBF-BE3

Part No.:: IRF840PBF-BE3

Manufacturer:: Vishay Siliconix

Package:: TO-220AB

Datasheet:

Description:: MOSFET N-CH 500V 8A TO220AB

In Stock:: 1015

Quantity:: Add To Cart

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IRF840PBF-BE3 Specifications

Packaging:
Tube
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
500 V
Current-ContinuousDrain(Id)@25°C:
8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
850mOhm @ 4.8A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
63 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1300 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
125W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

IRF840PBF-BE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF840PBF-BE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF840PBF-BE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF840PBF-BE3 information

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IRF840PBF-BE3 Typical application Circuitry

IRF840PBF-BE3

The IRF840PBF-BE3, hailing from the esteemed HEXFET® Power MOSFET lineup, stands as a testament to the pioneering technology of International Rectifier. This device embodies the seamless merger of state-of-the-art performance with impressive efficiency, optimized for a myriad of applications. To harness the full potential of the IRF840PBF-BE3, it's imperative to delve into its detailed pin configuration and the subsequent integration nuances.

1. Drain (D): The Drain terminal is typically the primary exit route for the current. In configurations like high-side switches, the Drain attaches directly to the load's one end, with the other end of the load then tethered to the positive terminal of the power supply. Conversely, for low-side switch deployments, the Drain links to one side of the load, and the opposite end grounds.

2. Gate (G): The Gate serves as the linchpin in modulating the MOSFET's conductive state. In most designs, this terminal is connected to a control signal, which often emanates from microcontrollers or dedicated driver circuits. The introduction of a series gate resistor is often pivotal. It mitigates excessive inrush current during switching and minimizes oscillatory tendencies. Furthermore, ensuring a pull-down resistor's presence to ground can guarantee that the IRF840PBF-BE3 remains dormant during undefined states.

3. Source (S): In the majority of low-side switch configurations, the Source pin directly grounds. For high-side switch designs, it connects to the load, essentially completing the circuit.

4. Augmenting Circuit Longevity:

- Protection Protocols: Introducing a zener diode between the Gate and Source can be instrumental in safeguarding the IRF840PBF-BE3 from potential over-voltage conditions. This diode ensures that voltage peaks do not exceed the gate-source voltage limits, preventing inadvertent damage.

- Thermal Considerations: The IRF840PBF-BE3, when operational, can generate heat, especially during high-current tasks. It's paramount to provision for adequate heat dissipation mechanisms, such as heat sinks, and to be wary of the ambient temperature.

- Gate Drive: To ensure the impeccable operation of the IRF840PBF-BE3, it's imperative to furnish it with an appropriate gate drive voltage. Depending on the specifics of the application, this might require an intermediary driver circuit.

In summation, the IRF840PBF-BE3 is an embodiment of refined engineering, bringing reliability and efficiency to the forefront. When integrating this device into circuits, meticulous adherence to its pin-level specifics and its datasheet's guidelines is paramount. As with any advanced semiconductor, before ushering the IRF840PBF-BE3 into full-fledged operations, a rigorous circuit evaluation is recommended to validate its seamless function and performance.

IRF840PBF-BE3 FAQ

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3. Are the IRF840PBF-BE3 price and inventory displayed accurate?

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6. What is the process for return or replacement of IRF840PBF-BE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF840PBF-BE3 we delivered, we will accept the replacement or return of the IRF840PBF-BE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF840PBF-BE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations