What is the Additional Feature ?

Name: IRF7455TRPBF-1
Brand: Infineon Technologies
SKU: IRF7455TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7455TRPBF-1

Part No.:: IRF7455TRPBF-1

Manufacturer:: Infineon Technologies

Package:: 8-SOIC

Datasheet:: IRF7455TRPBF-1.pdf

Description:: MOSFET N-CH 30V 15A 8SO

In Stock:: 2138

Quantity:: Add To Cart

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IRF7455TRPBF-1 Specifications

Packaging:
Tape & Reel (TR)
Series:
HEXFET®
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
15A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.8V, 10V
RdsOn(Max)@IdVgs:
7.5mOhm @ 15A, 10V
Vgs(th)(Max)@Id:
2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
56 nC @ 5 V
Vgs(Max):
±12V
InputCapacitance(Ciss)(Max)@Vds:
3480 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRF7455TRPBF-1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7455TRPBF-1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7455TRPBF-1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7455TRPBF-1 information

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IRF7455TRPBF-1 Typical application Circuitry

The IRF7455TRPBF-1 is an integral component from the HEXFET Power MOSFET portfolio by Infineon (previously part of International Rectifier), known for high efficiency and performance in power conversion and management applications. The device, characterized by its low on-state resistance and swift switching speeds, is pivotal in settings demanding energy thriftiness and compact design. The discourse here focuses on IRF7455TRPBF-1's pin-wise circuit integration, emphasizing precision and adherence to the component's technical contours.

1. Gate (G): Serving as the MOSFET's control input, the gate terminal regulates the device's operational state. A connection between the gate and the PWM output from the controller establishes the switching action. A resistor (Rg) is often in series to the gate, limiting the inrush current and damping oscillations arising from the circuit's inductive aspects.

2. Drain (D): The drain, being the output, connects directly to the negative terminal of the load in a typical low-side switch configuration. The IRF7455TRPBF-1's high current handling and rapid switching features facilitate efficient power regulation at this juncture.

3. Source (S): This terminal, the reference point for the gate voltage, connects to the system's ground. In configurations where the IRF7455TRPBF-1 is a high-side switch, the source connects to the load's negative terminal, requiring a bootstrap circuit or isolated power supply for the gate drive.

4. Enhanced Integration Strategies:

- Gate-Source Voltage Regulation: Introducing a zener diode between the gate and source (zener facing the gate) defends the IRF7455TRPBF-1 against excessive voltage, typically beyond the maximum Vgs threshold. This setup ensures operational stability, especially during voltage surges.

- Dealing with Back EMF: When inductive loads are present, a diode (flyback diode) across the load, cathode to the drain, and anode to the source, protects the IRF7455TRPBF-1 from counter electromotive forces, safeguarding the device during off-states.

- Thermal Regulation: Despite its efficiency, the IRF7455TRPBF-1 can encounter heat build-up during high-load conditions. Implementing thermal management, like heat sinks or active cooling, alongside monitoring the ambient operating conditions, preserves the MOSFET's longevity.

- Circuit Integrity Verification: Post-assembly, initiating a thorough functionality audit under nominal operational thresholds is crucial before any escalation in the power input, ensuring the MOSFET's parameters interact as expected within the circuit framework.

Utilizing the IRF7455TRPBF-1 necessitates a fusion of theoretical acumen and practical precision, ensuring that each connection reflects the component's specifications for optimal functionality. This process demands a careful interpretation of the IRF7455TRPBF-1's datasheet, acknowledging the nuances that distinguish its performance and ensuring adherence to safe handling practices. Consequently, the IRF7455TRPBF-1's incorporation within power electronics is both a testament to its capabilities and a commitment to meticulous engineering practices.

IRF7455TRPBF-1 FAQ

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3. Are the IRF7455TRPBF-1 price and inventory displayed accurate?

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6. What is the process for return or replacement of IRF7455TRPBF-1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7455TRPBF-1 we delivered, we will accept the replacement or return of the IRF7455TRPBF-1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7455TRPBF-1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations