What is the Additional Feature ?

Name: IRF7416TRPBF-1
Brand: Infineon Technologies
SKU: IRF7416TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7416TRPBF-1

Part No.:: IRF7416TRPBF-1

Manufacturer:: Infineon Technologies

Package:: 8-SOIC

Datasheet:: IRF7416TRPBF-1.pdf

Description:: MOSFET P-CH 30V 10A 8SO

In Stock:: 2656

Quantity:: Add To Cart

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IRF7416TRPBF-1 Specifications

Packaging:
Tape & Reel (TR)
Series:
HEXFET®
ProductStatus:
Obsolete
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
10A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
-
RdsOn(Max)@IdVgs:
20mOhm @ 5.6A, 10V
Vgs(th)(Max)@Id:
2.04V @ 250µA
GateCharge(Qg)(Max)@Vgs:
92 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1700 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRF7416TRPBF-1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7416TRPBF-1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7416TRPBF-1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7416TRPBF-1 information

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IRF7416TRPBF-1 Typical application Circuitry

IRF7416TRPBF-1

The IRF7416TRPBF-1 emerges from the renowned HEXFET Power MOSFET lineup, asserting itself as a high-performance P-Channel MOSFET. This device from International Rectifier excels in scenarios demanding low on-resistance and high switching speeds, particularly in compact designs due to its small footprint. Embedding the IRF7416TRPBF-1 into an electronic array involves nuanced comprehension of each pin's role and the overall circuitry. This exploration ensures that the unique traits of the IRF7416TRPBF-1 are fully harnessed.

1. Gate (G): The Gate is the MOSFET's control input. By applying a suitable voltage, you can modulate the conductance between the Drain and Source. Connection-wise, the Gate often links to a driving circuit or PWM controller and may require a series resistor to mitigate excessive inrush currents or oscillations, ensuring smooth transitions during switching events.

2. Drain (D): Serving as the output, the Drain is where the load connects. The IRF7416TRPBF-1's Drain typically connects to the higher potential of the power supply for P-Channel MOSFETs. It's pivotal to ensure that the voltage and current ratings are not surpassed to prevent overheating or failure.

3. Source (S): The Source pin is the current's return path and connects to the lower potential in a P-Channel setup. In several designs, this pin attaches directly to the ground plane, solidifying a stable electrical reference point.

4. Advanced Integration Considerations:

- Gate Threshold Management: Incorporating a pull-down resistor with the Gate ensures it defaults to a low state, avoiding unintended activation. This stability is crucial during power transitions or unexpected disruptions within the IRF7416TRPBF-1's operational sphere.

- Electrostatic Discharge (ESD) Precautions: Given the sensitivity of the Gate oxide layer, employing ESD protection, like a zener diode, safeguards the IRF7416TRPBF-1 from voltage spikes, preserving its longevity and reliability.

- Thermal Equilibrium: Even with superior silicon efficiency, the IRF7416TRPBF-1 can succumb to thermal stress during high-load scenarios. Implementing a heat sink or ensuring ample airflow can drastically enhance operational lifespans.

- Comprehensive Circuit Evaluation: Post-assembly, it's imperative to subject your design to a spectrum of tests, confirming the IRF7416TRPBF-1's functionality and its interaction with other circuit elements. Such verification often involves checking the gate drive signal, drain-to-source voltage, and overall thermal performance under load.

In essence, leveraging the IRF7416TRPBF-1's full potential hinges on strategic circuit incorporation, acknowledging its specifications, and adhering to safe handling practices. Ensuring these aspects align with the MOSFET's operational parameters will culminate in a robust, efficient electronic design. Therefore, continuous reference to the IRF7416TRPBF-1's datasheet is advisable, keeping abreast of any nuanced requisites for this particular component.

IRF7416TRPBF-1 FAQ

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6. What is the process for return or replacement of IRF7416TRPBF-1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7416TRPBF-1 we delivered, we will accept the replacement or return of the IRF7416TRPBF-1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7416TRPBF-1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations