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Name: IRF7410TRPBF-1
Brand: Infineon Technologies
SKU: IRF7410TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7410TRPBF-1

Part No.:: IRF7410TRPBF-1

Manufacturer:: Infineon Technologies

Package:: 8-SOIC

Datasheet:: IRF7410TRPBF-1.pdf

Description:: MOSFET P-CH 12V 16A 8SO

In Stock:: 3134

Quantity:: Add To Cart

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IRF7410TRPBF-1 Specifications

Packaging:
Tape & Reel (TR)
Series:
HEXFET®
ProductStatus:
Obsolete
FETType:
P-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
12 V
Current-ContinuousDrain(Id)@25°C:
16A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
-
RdsOn(Max)@IdVgs:
7mOhm @ 16A, 4.5V
Vgs(th)(Max)@Id:
900mV @ 250µA
GateCharge(Qg)(Max)@Vgs:
91 nC @ 4.5 V
Vgs(Max):
±8V
InputCapacitance(Ciss)(Max)@Vds:
8676 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRF7410TRPBF-1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7410TRPBF-1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7410TRPBF-1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7410TRPBF-1 information

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IRF7410TRPBF-1 Typical application Circuitry

IRF7410TRPBF-1

The IRF7410TRPBF-1 emerges as a crucial component within the HEXFET® power MOSFET lineup, courtesy of its nuanced optimization for swift switching and low on-resistance. Manufactured by Infineon (previously International Rectifier), this P-Channel MOSFET operates with an advanced process technology that underscores power efficiency, making it integral for lightweight and streamlined power management applications. Here, we will dissect the connection blueprint for the IRF7410TRPBF-1, ensuring a holistic understanding of its operational dynamics.

1. Gate (G): This terminal acts as the command center for the IRF7410TRPBF-1, regulating its switching activities. The gate-source voltage (Vgs) controls the transistor's on/off state. It's imperative to connect a gate-drive circuit or PWM controller for precise control. Considering the sensitivity of the Gate to voltage spikes, it's prudent to include a gate resistor to dampen potential surges and maintain signal integrity.

2. Drain (D): Acting as the output reference point, the Drain is where the load circuitry integrates. Whether you're driving a motor, powering a light, or operating a resistive load, the connection extends from this terminal. For high-side switch configurations, the Drain connects to the positive side of the power supply, whereas, for a low-side switch, it ties directly to the load.

3. Source (S): The Source pin is foundational for completing the current's circuit path. In standard operations, it links to the system's ground. However, in high-side switching applications, it connects to the negative terminal of the load.

4. Refining Circuit Integration:

- Protection Diodes: Utilizing a flyback diode becomes necessary when inductive loads are in play. This strategy curtails voltage transients and safeguards the IRF7410TRPBF-1 from potential back EMF complications.

- Gate Security Measures: Implementing a zener diode between the Gate and Source can prove instrumental. This structure caps the voltage, shielding the gate oxide from destructive overvoltage conditions.

- Thermal Regulation: Despite the IRF7410TRPBF-1's efficiency, scenarios of high current can induce thermal stress. Employing thermal management, such as heat sinks or regulated airflow, preserves the MOSFET's lifespan and reliability.

- Verification Phase: Post-assembly, initiating a thorough testing protocol is crucial. This diagnostic phase, encompassing stress tests and functional evaluations, ensures the circuit's readiness for its intended application.

To encapsulate, the IRF7410TRPBF-1 is a testament to technological advancement in power management sectors, particularly in spaces dictated by efficiency and spatial economy. Its integration commands a nuanced approach, necessitating a circuit design that respects its operational thresholds and electrostatic sensitivities. Abiding by these guidelines ensures that every feature of the IRF7410TRPBF-1 is fully harnessed and its functionality meticulously optimized within the electronic design narrative.

IRF7410TRPBF-1 FAQ

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6. What is the process for return or replacement of IRF7410TRPBF-1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7410TRPBF-1 we delivered, we will accept the replacement or return of the IRF7410TRPBF-1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7410TRPBF-1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations