What is the Additional Feature ?

Name: IRF640NPBF
Brand: Infineon Technologies
SKU: IRF640NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF640NPBF

Part No.:: IRF640NPBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRF640NPBF.pdf

Description:: MOSFET N-CH 200V 18A TO220AB

In Stock:: 78692

Quantity:: Add To Cart

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IRF640NPBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
200 V
Current-ContinuousDrain(Id)@25°C:
18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
150mOhm @ 11A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
67 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1160 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
150W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRF640NPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF640NPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF640NPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF640NPBF information

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IRF640NPBF Typical application Circuitry

IRF640NPBF

The IRF640NPBF, a member of the extensive IRF series, is a power MOSFET acclaimed for its efficiency and thermal performance, key in power management applications. This N-Channel MOSFET, owing to its robustness, is integral in sectors like computing, consumer electronics, and industrial automation. Here we dissect the methodology of incorporating the IRF640NPBF into a circuit, with an accent on each pin's role, ensuring an efficacious deployment.

1. Drain (D): This terminal, acting as the MOSFET's output, connects directly to the negative side of the load, with the load's positive side tied to the power source. Ensure the drain-to-source voltage doesn't exceed the maximum specified limit to avoid compromising the IRF640NPBF's operational integrity.

2. Gate (G): The gate controls the MOSFET's switching operations. This terminal is where the input signal, usually a PWM (Pulse Width Modulation) signal, is applied to switch the MOSFET. Given the IRF640NPBF's susceptibility to voltage spikes, a gate-resistor is advisable here to balance the voltage levels, thus averting potential damage.

3. Source (S): This terminal is commonly connected to the ground in the circuit (for standard applications). It serves as the reference point for the gate voltage, a crucial aspect since the voltage difference between the gate and the source dictates the MOSFET's conduction.

4. Strategic Incorporation of Protective Elements:

- Flyback Diode: Especially pertinent when the load is inductive (like motors), installing a diode across the load is prudent. This diode curbs potentially damaging voltage spikes caused by the sudden collapse of magnetic fields when current is halted to the inductive load.

- Gate Protection: A zener diode parallel to the gate resistor (cathode connected to the gate) can be instrumental in protecting against high-voltage transients. This setup prevents the voltage across the gate and source from exceeding a safe threshold.

5. Navigating Thermal Management: The IRF640NPBF can handle high currents, which, if unchecked, might lead to substantial heat build-up. Employing a heat sink is a strategic move to dissipate this heat effectively, ensuring the MOSFET's longevity and stability.

6. Ensuring Operational Harmony: It's pivotal to monitor the gate threshold voltage, drain current, and power dissipation, ensuring they align with the IRF640NPBF's specifications as outlined in the datasheet. This vigilance prevents the component from operating in zones that could trigger thermal runway or other forms of operational jeopardy.

7. Post-Integration Evaluation: After the circuit assembly, a comprehensive test under low-stress conditions is recommended. This step is to verify the functionality before a full-scale roll-out, ensuring the IRF640NPBF operates within the safe operating area (SOA).

IRF640NPBF FAQ

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6. What is the process for return or replacement of IRF640NPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF640NPBF we delivered, we will accept the replacement or return of the IRF640NPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF640NPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations