What is the Additional Feature ?

Name: IRF540NPBF
Brand: Infineon Technologies
SKU: IRF540NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF540NPBF

Part No.:: IRF540NPBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRF540NPBF.pdf

Description:: MOSFET N-CH 100V 33A TO220AB

In Stock:: 98583

Quantity:: Add To Cart

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IRF540NPBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
44mOhm @ 16A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
71 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1960 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
130W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRF540NPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF540NPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF540NPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF540NPBF information

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IRF540NPBF Typical application Circuitry

IRF540NPBF

The IRF540NPBF is a renowned member of International Rectifier's portfolio of power MOSFETs. This N-channel MOSFET is highly esteemed for its rapid switching capabilities, low on-resistance (RDS(on)), and ability to handle significant current and voltage. Ideally suited for a myriad of applications ranging from switching power supplies to motor control, the IRF540NPBF's electrical characteristics are a testament to its efficiency and reliability. To harness its full potential, meticulous attention to its integration into circuits is essential.

1. Gate (G): The command hub of the IRF540NPBF, this terminal determines the transistor's on/off state. When a voltage is applied between the Gate and Source (VGS) that surpasses the threshold voltage (Vth), the MOSFET transitions to its conductive state. It's prudent to connect the Gate via a resistor to the control signal source, allowing for controlled turn-on and turn-off rates.

2. Drain (D): As the primary output path, the Drain is typically connected to the device or load you wish to control with the IRF540NPBF. Its connection varies depending on whether you're configuring the MOSFET in a high-side or low-side switch mode.

3. Source (S): In the majority of standard applications, especially low-side switching setups, this terminal is anchored to the ground. However, for high-side configurations, the Source connects directly to the load.

4. Supplementary Circuitry Elements:

- Gate Protection: To safeguard the IRF540NPBF against accidental electrostatic discharge (ESD) events, consider integrating a zener diode between the Gate and Source. This diode can clamp the voltage and prevent over-voltages that might damage the Gate oxide.

- Flyback Diode: If the IRF540NPBF is orchestrating inductive loads like motors or relays, a diode placed anti-parallel to the load is essential. This diode combats potential voltage spikes, which may arise due to the inductive nature of the load when the MOSFET turns off.

5. Operational Considerations: Ensure the voltage applied to the Gate (VGS) respects the specified limits from the datasheet to prevent stressing or damaging the IRF540NPBF. Simultaneously, ensure the Drain-to-Source voltage (VDS) and the current flowing through the MOSFET remain within permissible bounds.

In conclusion, integrating the IRF540NPBF into electronic designs necessitates a blend of precision in connections and a keen understanding of its capabilities. By abiding by the aforementioned guidelines and always having the MOSFET's datasheet at hand for specific details, one can realize the optimal performance that the IRF540NPBF promises. As usual, for complicated applications, seeking the advice of specialists can provide more details and subtleties.

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6. What is the process for return or replacement of IRF540NPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF540NPBF we delivered, we will accept the replacement or return of the IRF540NPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF540NPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations