What is the Additional Feature ?

Name: IRF3710ZPBF
Brand: Infineon Technologies
SKU: IRF3710ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF3710ZPBF

Part No.:: IRF3710ZPBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRF3710ZPBF.pdf

Description:: MOSFET N-CH 100V 59A TO220AB

In Stock:: 3662

Quantity:: Add To Cart

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IRF3710ZPBF Specifications

Packaging:
Bulk,Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
59A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
18mOhm @ 35A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
120 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
2900 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
160W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRF3710ZPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF3710ZPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF3710ZPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF3710ZPBF information

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IRF3710ZPBF Typical application Circuitry

The IRF3710ZPBF is an esteemed component of the HEXFET® Power MOSFET family, recognized for its superior performance in power handling and efficiency. This N-channel MOSFET is adept at managing demanding applications that require high-speed switching and robust power efficiency, making it well-suited for use in power supply systems, DC-DC converters, and motor control circuits across a diverse range of industrial, automotive, and consumer electronics.

1. Voltage Compatibility (VDS): The IRF3710ZPBF is designed to accommodate drain-source voltages up to 100V, offering a versatile solution for a multitude of high-voltage applications. In the circuit integration process, the drain (D) terminal should be connected to the higher voltage end of the load, ensuring the IRF3710ZPBF can effectively handle the voltage differential and manage power flow efficiently.

2. Gate Activation (VGS): The gate-source voltage (VGS) is pivotal for the IRF3710ZPBF's functionality, governing the MOSFET's switching states. Accurate application of voltage to the gate (G) in relation to the source (S) is crucial for precise control over the device's conductive state, enabling efficient power modulation within the electronic system.

3. Current Conduction Efficiency (ID): The IRF3710ZPBF boasts the capability to conduct high levels of drain current, a critical feature for high-power applications. It is essential to ensure a minimal resistance path from the drain (D) to the source (S) to fully utilize the IRF3710ZPBF's efficiency, thereby optimizing circuit performance and minimizing energy dissipation.

4. Thermal Management Approaches (RθJA, RθJC): Proper thermal regulation is crucial for maintaining the IRF3710ZPBF's performance, with its junction-to-ambient (RθJA) and junction-to-case (RθJC) thermal resistances indicative of its heat dissipation efficiency. Implementing suitable cooling mechanisms, such as heat sinks, is vital to maintain the MOSFET within its operational temperature range, ensuring reliability and longevity.

5. Durability Features (Avalanche Rated): The IRF3710ZPBF is equipped with an avalanche rating, underscoring its resilience against voltage surges and spikes, and enhancing the device's robustness and reliability in challenging electrical environments.

6. Switching Dynamics (Rapid Transition Speeds): Characterized by its swift switching speeds, the IRF3710ZPBF is optimized to minimize transition losses, improving efficiency in applications that demand quick power modulation, such as switching regulators and PWM circuits.

7. Packaging and Installation (Lead Design, Soldering Practices): The IRF3710ZPBF's TO-220 package is designed for effective PCB mounting, featuring a lead design that ensures optimal electrical and thermal connection. Adherence to proper soldering techniques is critical to maintain the MOSFET's functionality and durability within the circuit.

Integrating the IRF3710ZPBF into an electronic design requires a comprehensive understanding of its operational characteristics and a meticulous approach to circuit configuration. By carefully managing the connections to each terminal and addressing the device's thermal and dynamic specifications, designers can effectively harness the capabilities of the IRF3710ZPBF to enhance the power management efficiency and reliability of their electronic systems.

IRF3710ZPBF FAQ

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3. Are the IRF3710ZPBF price and inventory displayed accurate?

The price and inventory of IRF3710ZPBF fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of IRF3710ZPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF3710ZPBF we delivered, we will accept the replacement or return of the IRF3710ZPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF3710ZPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations