What is the Additional Feature ?

Name: IRF2807PBF
Brand: Infineon Technologies
SKU: IRF2807PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF2807PBF

Part No.:: IRF2807PBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRF2807PBF.pdf

Description:: MOSFET N-CH 75V 82A TO220AB

In Stock:: 5621

Quantity:: Add To Cart

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IRF2807PBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
75 V
Current-ContinuousDrain(Id)@25°C:
82A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
13mOhm @ 43A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
160 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
3820 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
230W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRF2807PBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF2807PBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF2807PBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF2807PBF information

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IRF2807PBF Typical application Circuitry

IRF2807PBF

The IRF2807PBF stands as a distinguished member of International Rectifier's HEXFET® power MOSFETs, renowned for their advanced processing techniques, leading to substantial reductions in on-resistance. This specific MOSFET is designed to endure fast switching, delivering commendable performance in an array of applications. For engineers and designers looking to harness the power of the IRF2807PBF, understanding its pinout and circuit connection is quintessential.

1. Drain (D): Acting as the output channel for the MOSFET, the Drain finds its connection typically to the one side of the load. Depending on the application, the other end of the load connects either to the positive terminal of the power supply (for high-side switching) or ground (for low-side switching).

2. Gate (G): The Gate is the epicenter of control for the IRF2807PBF. It links to the output of the control circuit, which can be a microcontroller, PWM generator, or another relevant driver source. To achieve stability and prevent oscillations, it's common practice to integrate a resistor (known as a gate resistor) between this terminal and the control signal's origin.

3. Source (S): This terminal generally forms the ground connection in most basic switching setups. For configurations involving high-side switches, the Source attaches directly to the end of the load.

4. Safety and Enhancement Components:

- Protection Diode: Especially when the circuit deals with inductive loads, it's crucial to use a diode (commonly referred to as a flyback or freewheeling diode) parallel to the load. This arrangement safeguards the IRF2807PBF against voltage surges resulting from inductive kickback.

- Gate Protection: To shield the MOSFET from potential over-voltage conditions, integrating a zener diode between the Gate and Source can be beneficial. This structure ensures that the voltage on the Gate does not surpass the zener voltage, thereby offering protection.

5. Addressing Thermal Concerns: When the IRF2807PBF handles significant currents, it's susceptible to heat accumulation. Effective thermal management, achieved by attaching a suitable heatsink, ensures the device operates within permissible temperature limits.

6. Input Signal Management: To optimize the efficiency and responsiveness of the IRF2807PBF, it's essential to ensure the Gate voltage (Vgs) aligns with the values recommended in its datasheet, enabling full enhancement of the MOSFET.

7. Observing Operating Constraints: Fidelity to the specified limits, as detailed in the IRF2807PBF datasheet, is non-negotiable. This adherence ensures that the MOSFET doesn't experience undue stress, safeguarding its longevity and performance reliability.

To summarize, while the IRF2807PBF boasts remarkable capabilities, leveraging its full potential hinges on meticulous attention to its connections and respect for its operational boundaries. Before integrating it into any design, a thorough study of the IRF2807PBF datasheet, combined with adherence to best practices, guarantees optimal results.

IRF2807PBF FAQ

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3. Are the IRF2807PBF price and inventory displayed accurate?

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6. What is the process for return or replacement of IRF2807PBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF2807PBF we delivered, we will accept the replacement or return of the IRF2807PBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF2807PBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations