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Name: IRF1010EPBF
Brand: Infineon Technologies
SKU: IRF1010EPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF1010EPBF

Part No.:: IRF1010EPBF

Manufacturer:: Infineon Technologies

Package:: TO-220AB

Datasheet:: IRF1010EPBF.pdf

Description:: MOSFET N-CH 60V 84A TO220AB

In Stock:: 7574

Quantity:: Add To Cart

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IRF1010EPBF Specifications

Packaging:
Tube
Series:
HEXFET®
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
84A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
12mOhm @ 50A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
130 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
3210 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
200W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IRF1010EPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF1010EPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF1010EPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF1010EPBF information

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IRF1010EPBF Typical application Circuitry

IRF1010EPBF

The IRF1010EPBF is an N-channel Power MOSFET developed by Infineon Technologies, designed for high-speed switching applications in power electronics.

Application Scenarios

The IRF1010EPBF is commonly used in scenarios such as automotive applications, DC-DC converters, solar power inverters, and high-performance power management systems where efficient power conversion is critical. Its robustness makes it particularly suitable for applications requiring high reliability and efficiency under demanding conditions.

Parameter Features

Key features of the IRF1010EPBF include:

- Drain-Source Voltage (Vds): Offers a high voltage rating, allowing it to be used in high-voltage applications.

- Continuous Drain Current (Id): Suitable for high-power applications, it can conduct high currents.

- Rds(on): Exhibits low on-state resistance, ensuring minimal power loss during operation and enhancing overall system efficiency.

- Package: Available in a TO-220 package, which is widely used for its ease of mounting and good thermal dissipation properties.

Circuit Connection Example: Automotive Motor Control

In an automotive motor control circuit, the IRF1010EPBF can be used to control the motor's speed and direction, leveraging its high current handling and fast switching capabilities.

1. Gate Drive Connection:

- Gate (G, pin 1): Connect the gate to a PWM output from a microcontroller through a gate-driving circuit. It should be possible for this circuit to supply enough voltage and current to effectively switch the IRF1010EPBF.

2. Connection for Motor Load:

- Drain (D, pin 2): Attach the drain straight to a motor terminal. This pin acts as the output for the motor control circuit, where the motor's speed is controlled by the PWM signal.

3. Source Connection:

- Source (S, pin 3): Connect the source to the ground. This completes the current path for the motor circuit.

4. Freewheeling Diode:

- Attach the cathode of a diode to the IRF1010EPBF's drain and place it across the motor terminals. This diode provides a path for the inductive kickback from the motor when the MOSFET turns off, protecting the IRF1010EPBF from voltage spikes.

5. Gate Resistor:

- Include a resistor in series with the gate to limit the inrush current and to dampen any oscillations due to the gate capacitance and the inductive nature of the circuit.

Design Considerations

When designing a circuit with the IRF1010EPBF, several critical factors must be considered:

- Thermal Management: Proper heat sinking is necessary to dissipate the heat generated by the IRF1010EPBF during high current operations, ensuring the MOSFET operates within its thermal limits.

- Gate Drive Requirements: The gate drive circuit must be designed to provide the gate voltage that exceeds the threshold voltage of the IRF1010EPBF to ensure it fully turns on, minimizing conduction losses.

- Parasitic Inductance and Capacitance: Minimize the loop area around the high-current paths and the gate circuit to reduce parasitic inductance and capacitance, which can affect switching performance and efficiency.

- Protection Mechanisms: Implement over-current, over-voltage, and thermal protection to enhance the reliability of the motor control circuit and prevent damage to the IRF1010EPBF under fault conditions.

By carefully considering these design principles and correctly implementing the IRF1010EPBF in an automotive motor control application, designers can achieve efficient, reliable, and precise motor management suitable for the demanding environments of automotive applications.

IRF1010EPBF FAQ

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6. What is the process for return or replacement of IRF1010EPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF1010EPBF we delivered, we will accept the replacement or return of the IRF1010EPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF1010EPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations