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Name: IPZ60R017C7XKSA1
Brand: Infineon Technologies
SKU: IPZ60R017C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPZ60R017C7XKSA1

Part No.:: IPZ60R017C7XKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO247-4

Datasheet:: IPZ60R017C7XKSA1.pdf

Description:: MOSFET N-CH 600V 109A TO247-4

In Stock:: 16932

Quantity:: Add To Cart

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IPZ60R017C7XKSA1 Specifications

Packaging:
Bulk,Tube
Series:
CoolMOS™ C7
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
600 V
Current-ContinuousDrain(Id)@25°C:
109A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
17mOhm @ 58.2A, 10V
Vgs(th)(Max)@Id:
4V @ 2.91mA
GateCharge(Qg)(Max)@Vgs:
240 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
9890 pF @ 400 V
FETFeature:
-
PowerDissipation(Max):
446W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

IPZ60R017C7XKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPZ60R017C7XKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPZ60R017C7XKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPZ60R017C7XKSA1 information

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IPZ60R017C7XKSA1 Typical application Circuitry

IPZ60R017C7XKSA1

The IPZ60R017C7XKSA1 is a high-performance CoolMOS™ C7 Power MOSFET from Infineon Technologies, known for its exceptional power efficiency and high power density. This device is designed for a wide range of high-voltage power applications, particularly where low on-resistance and fast switching are crucial.

Application Scenarios

The IPZ60R017C7XKSA1 is ideally suited for applications such as switched-mode power supplies (SMPS), lighting applications (e.g., LED drivers), DC-DC converters, and high-frequency inverter circuits. Its efficiency and thermal performance make it an excellent choice for energy-sensitive and compact designs.

Parameter Features

Key features of the IPZ60R017C7XKSA1 include:

- Drain-Source Voltage (Vds): Capable of handling high voltages, which makes it suitable for a variety of power applications.

- Continuous Drain Current (Id): It supports high current levels, enabling it to drive significant loads.

- Rds(on): Features an exceptionally low on-state resistance, ensuring minimal power losses and improving overall efficiency.

- Package: The TO-247 package is used, offering excellent thermal conductivity and ease of mounting on heat sinks.

Circuit Connection Example: High-Frequency SMPS

In a high-frequency SMPS application, the IPZ60R017C7XKSA1 can be utilized as the primary switch in a half-bridge configuration.

1. Gate Drive Connection:

- Gate (G, pin 1): Connect to the output of a gate driver IC, ensuring the driver can deliver the appropriate voltage and current to fully enhance and switch the MOSFET at high frequencies.

2. Drain Connection to High Voltage:

- Drain (D, pin 2): Attach to the primary side of the SMPS transformer. This point is where the high voltage is switched to generate the desired output voltage after stepping down and rectification.

3. Source Connection to Ground/Return Path:

- Source (S, pin 3): Link to the ground or the negative side of the power supply circuit. This serves as the current return path for the MOSFET.

4. Bootstrap Circuit for High-Side Drive:

- Include a bootstrap diode and capacitor connected between the supply voltage (Vcc) and the gate drive supply (Vbs) for the high-side MOSFET in the half-bridge. This setup provides the necessary gate drive voltage.

5. Snubber Circuit:

- Implement a snubber circuit across the Drain and Source to protect the IPZ60R017C7XKSA1 from voltage spikes and ringing due to parasitic inductances, enhancing reliability.

Design Considerations

When designing with the IPZ60R017C7XKSA1, several key aspects should be taken into account:

- Thermal Management: Given the high power levels, ensure adequate cooling for the MOSFET, possibly with a heatsink or forced air cooling, to maintain optimal operating temperatures.

- Gate Drive Strength: The gate driver must provide sufficient drive strength to switch the IPZ60R017C7XKSA1 efficiently, minimizing switching losses and avoiding partial enhancement.

- Parasitic Inductance and Capacitance: Minimize parasitic elements in the PCB layout to reduce the risk of oscillations and ensure stable operation at high frequencies.

- Protection Mechanisms: Incorporate protection features such as over-current, over-voltage, and thermal protection to safeguard the MOSFET and the overall circuit from abnormal conditions.

By carefully considering these design principles and effectively utilizing the IPZ60R017C7XKSA1 in a high-frequency SMPS, designers can achieve efficient, reliable, and compact power conversion solutions suitable for a wide range of electronic applications.

IPZ60R017C7XKSA1 FAQ

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6. What is the process for return or replacement of IPZ60R017C7XKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPZ60R017C7XKSA1 we delivered, we will accept the replacement or return of the IPZ60R017C7XKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPZ60R017C7XKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations