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Name: IPW65R080CFDAFKSA1
Brand: Infineon Technologies
SKU: IPW65R080CFDAFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPW65R080CFDAFKSA1

Part No.:: IPW65R080CFDAFKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO247-3

Datasheet:: IPW65R080CFDAFKSA1.pdf

Description:: MOSFET N-CH 650V 43.3A TO247-3

In Stock:: 3697

Quantity:: Add To Cart

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IPW65R080CFDAFKSA1 Specifications

Packaging:
Bulk,Tube
Series:
Automotive, AEC-Q101, CoolMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
650 V
Current-ContinuousDrain(Id)@25°C:
43.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
80mOhm @ 17.6A, 10V
Vgs(th)(Max)@Id:
4.5V @ 1.76mA
GateCharge(Qg)(Max)@Vgs:
161 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
4440 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
391W (Tc)
OperatingTemperature:
-40°C ~ 150°C (TJ)
MountingType:
Through Hole

IPW65R080CFDAFKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPW65R080CFDAFKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPW65R080CFDAFKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPW65R080CFDAFKSA1 information

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IPW65R080CFDAFKSA1 Typical application Circuitry

The IPW65R080CFDAFKSA1 represents a prominent member of the CoolMOS™ FD (Fast Diode) series, notable for its combination of fast switching, exceptional energy efficiency, and outstanding thermal performance. Designed for sophisticated power conversion operations, the IPW65R080CFDAFKSA1 capitalizes on reduced conduction and switching losses, pushing the boundaries of performance in high-frequency switching applications. This guidance delves into the specifics of interfacing the IPW65R080CFDAFKSA1 into an electronic schema, emphasizing meticulous attention to each terminal.

1. Circuit Interfacing Blueprint:

- Drain (D): Constituting the principal conduit for load-bound current, the Drain contact seeks direct affiliation with the load's designated terminal. The opposing terminal of the load either merges with the positive vertex of the power source (common in high-side switch dynamics) or consolidates with the ground (characteristic of low-side switch implementations).

- Gate (G): As the chief regulator of the IPW65R080CFDAFKSA1's conductivity, this terminal mandates a liaison with the output frontier of the control apparatus. To fortify against potential hazards and to finetune the switching cadence, an inline resistor is often advocated. A designated gate resistor, positioned in tandem with the gate and the control mechanism's delivery point, assuages the onset of abrupt current variations during transitions.

- Source (S): While predominantly tethered to the ground in canonical switch configurations, in the domain of high-side orchestration, this terminal finds its allegiance with the load.

2. Protective Mechanism Integration:

- Counterflow Diode: Engaging with inductive apparatuses necessitates the annexation of a supplementary diode with the IPW65R080CFDAFKSA1, juxtaposed alongside the load. This formation mitigates voltage perturbations arising from inductive releases, safeguarding the MOSFET's functional integrity.

- Gate Defense Protocol: Instituting a zener diode amidst the gate and source terminals forestalls voltage excesses. Concurrently, an embedded resistor within the gate's trajectory tempers current influxes, shielding the IPW65R080CFDAFKSA1 from potential electrostatic breaches.

3. Thermal Stewardship Measures: Given the IPW65R080CFDAFKSA1's susceptibility to thermal accumulation, particularly during elevated current operations, judicious implementation of heat dissipation stratagems, aligned with stipulated thermal benchmarks, is imperative.

4. Perfecting the Gate Drive: Ensuring that the gate voltage for the IPW65R080CFDAFKSA1 adheres to optimal thresholds is fundamental. This often calls for intermediary circuitry, like a driver module or a level adaptor, particularly when the instruction set is sourced from diminutive voltage domains.

5. Compliance Regimen: Unwavering commitment to the operational benchmarks demarcated for the IPW65R080CFDAFKSA1 is essential, ascertaining that the MOSFET neither exceeds prescribed voltage and current domains nor encounters transient anomalies.

6. Circuitry Evaluation Paradigm: Subsequent to the assimilation of components, it's imperative to instigate a rigorous examination regimen under constrained power metrics, preceding any elevation to full operational capacity.

Exercising caution while maneuvering the IPW65R080CFDAFKSA1 is non-negotiable, given its vulnerability to electrostatic events. The meticulous integration of this MOSFET mandates comprehensive cross-referencing with its explicit datasheet, discerning the nuances unique to the IPW65R080CFDAFKSA1.

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6. What is the process for return or replacement of IPW65R080CFDAFKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPW65R080CFDAFKSA1 we delivered, we will accept the replacement or return of the IPW65R080CFDAFKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPW65R080CFDAFKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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