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Name: IPW65R048CFDAFKSA1
Brand: Infineon Technologies
SKU: IPW65R048CFDAFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPW65R048CFDAFKSA1

Part No.:: IPW65R048CFDAFKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO247-3

Datasheet:: IPW65R048CFDAFKSA1.pdf

Description:: MOSFET N-CH 650V 63.3A TO247-3

In Stock:: 221

Quantity:: Add To Cart

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IPW65R048CFDAFKSA1 Specifications

Packaging:
Tube
Series:
Automotive, AEC-Q101, CoolMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
650 V
Current-ContinuousDrain(Id)@25°C:
63.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
48mOhm @ 29.4A, 10V
Vgs(th)(Max)@Id:
4.5V @ 2.9mA
GateCharge(Qg)(Max)@Vgs:
270 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
7440 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
500W (Tc)
OperatingTemperature:
-40°C ~ 150°C (TJ)
MountingType:
Through Hole

IPW65R048CFDAFKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPW65R048CFDAFKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPW65R048CFDAFKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPW65R048CFDAFKSA1 information

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IPW65R048CFDAFKSA1 Typical application Circuitry

The IPW65R048CFDAFKSA1, a member of the innovative CoolMOS™ series, is recognized for its stellar performance in energy conservation, reduced power losses, and unparalleled robustness, establishing itself as a cornerstone in sophisticated power conversion strategies. With attributes such as rapid switching capabilities and diminished on-resistance, the IPW65R048CFDAFKSA1 is pivotal in operations where efficiency and compact power density are of the essence. The following discourse delves into the nuanced approach required for the seamless incorporation of the IPW65R048CFDAFKSA1 into an electrical circuit, with an emphasis on pin-specific connections to ensure the device's exemplary function.

1. Detailing the Circuit Integration Process:

- Drain (D): This terminal, a conduit for the load's current, mandates a unidirectional connection with the load's extremity. The other segment of the load aligns with the power supply's positive pole in the high-side switching paradigm or to the circuit's common ground in a low-side switching framework.

- Gate (G): As the operational maestro, the Gate terminal governs the IPW65R048CFDAFKSA1's conductive or non-conductive states. Its connection extends from the control signal's terminus, potentially embracing a resistor in series for protective coherence and enhanced switching nuances. A gate resistor nestled between the control signal source and the gate tempers the influx of current during transitions and quells potential oscillations.

- Source (S): This terminal, typically interfaced with the ground in more rudimentary switching models, aligns directly with the load in high-side switching orchestrations.

2. Embracing Protective Measures:

- Flyback Diode: The IPW65R048CFDAFKSA1, when employed with inductive loads, calls for a companion diode in tandem with the load, safeguarding against voltage spikes that arise from inductive reactions, thereby sustaining the MOSFET's operational integrity.

- Gate Preservation Tactics: The installation of a zener diode between gate and source wards off excessive voltage influx, while the strategic placement of a resistor within the gate's purview moderates current flow, providing a fortress of protection for the IPW65R048CFDAFKSA1.

3. Managing Thermal Dynamics: Given the IPW65R048CFDAFKSA1's potential thermal accumulation under hefty current regimes, masterful heat dissipation tactics, conformant with delineated thermal resistance protocols, are indispensable.

4. Refining Gate Drive Parameters: Operational excellence for the IPW65R048CFDAFKSA1 requires a gate voltage within specified thresholds, often invoking the need for a bespoke driver circuit or a level transition mechanism, particularly when directives emanate from low-voltage domains.

5. Upholding Specified Directives: Rigorous adherence to the IPW65R048CFDAFKSA1's operational ceilings ensures that neither voltage nor current trajectories breach prescribed frontiers, circumventing anomalies such as inrush currents.

6. Rigorous Functional Appraisal: Consequent to circuit integration, an exhaustive evaluation under restrained power parameters is crucial, preceding full-scale operational deployment.

The manipulation of the IPW65R048CFDAFKSA1 necessitates a strict observance of electrostatic discharge guidelines to avert unintentional impairments. Its integration within any electronic ambit should be meticulously corroborated with its datasheet's nuanced directives, capturing the essence and operational subtleties pertinent to the IPW65R048CFDAFKSA1.

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6. What is the process for return or replacement of IPW65R048CFDAFKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPW65R048CFDAFKSA1 we delivered, we will accept the replacement or return of the IPW65R048CFDAFKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPW65R048CFDAFKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations