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Name: IPW65R019C7FKSA1
Brand: Infineon Technologies
SKU: IPW65R019C7FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPW65R019C7FKSA1

Part No.:: IPW65R019C7FKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO247-3

Datasheet:: IPW65R019C7FKSA1.pdf

Description:: MOSFET N-CH 650V 75A TO247-3

In Stock:: 279

Quantity:: Add To Cart

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IPW65R019C7FKSA1 Specifications

Packaging:
Tube
Series:
CoolMOS™ C7
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
650 V
Current-ContinuousDrain(Id)@25°C:
75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
19mOhm @ 58.3A, 10V
Vgs(th)(Max)@Id:
4V @ 2.92mA
GateCharge(Qg)(Max)@Vgs:
215 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
9900 pF @ 400 V
FETFeature:
-
PowerDissipation(Max):
446W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

IPW65R019C7FKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPW65R019C7FKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPW65R019C7FKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPW65R019C7FKSA1 information

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IPW65R019C7FKSA1 Typical application Circuitry

The IPW65R019C7FKSA1 is a stellar exemplar of the cutting-edge CoolMOS™ C7 series, acclaimed for its unparalleled efficiency, minimized power losses, and unrivaled resilience in various high-frequency power conversion applications. Renowned for its groundbreaking fast-switching capabilities and extraordinarily low on-resistance, the IPW65R019C7FKSA1 is pivotal in settings where performance, efficiency, and space conservation are paramount. Delving deeper, let's elucidate the meticulous interconnection strategy for the IPW65R019C7FKSA1 within a circuit framework, ensuring unparalleled precision and reliability.

1. Precision-Driven Circuit Integration Approach:

- Drain (D): Acting as the principal conduit for current destined to the load, the Drain interface should be seamlessly integrated with one segment of the designated load. The opposing segment, depending on the configuration, either aligns with the positive terminal of the power reservoir (as seen in high-side switching setups) or grounds itself (characteristic of low-side switching paradigms).

- Gate (G): Epitomizing control, the Gate terminal steers the conductive stance of the IPW65R019C7FKSA1. This junction extends its connectivity to the egress of the control matrix, potentially integrating a judiciously chosen resistor in its trajectory to shape the switching dynamics and bestow additional layers of protection. Furthermore, to stave off undesirable oscillatory behavior and manage gate surge currents, the strategic placement of a gate resistor between the control epicenter and the gate proves beneficial.

- Source (S): While traditionally the Source finds its anchor in the ground in vanilla switching designs, in high-side switch configurations, it seeks direct connectivity with the load assembly.

2. Shielding the Circuit:

- Counteracting Diode: In scenarios where inductive loads are in play, the IPW65R019C7FKSA1 calls for a collateral diode, juxtaposed in parallel to the load. This configuration serves as the vanguard against insidious voltage spikes emanating from inductive recoil, thereby fortifying the MOSFET's operational lifespan.

- Gate Defensive Regime: To bolster the IPW65R019C7FKSA1 against voltage excursions, introducing a zener diode between the gate and source is a strategic move. Additionally, embedding a current-limiting resistor within the gate's trajectory ensures the IPW65R019C7FKSA1 remains immune to inadvertent current surges.

3. Thermodynamic Equilibrium: Given the IPW65R019C7FKSA1's predisposition to generate heat under copious current conditions, investing in adept heat dissipation methodologies, tailored to the MOSFET's thermal resistance benchmarks, is non-negotiable.

4. Orchestrating the Gate Drive: Facilitating optimal gate voltage conditions is instrumental for the IPW65R019C7FKSA1's flawless performance. This often prompts the deployment of a bespoke driver circuit or a voltage translator, particularly when interfacing with low-amplitude control signals.

5. Conformity to Standards: Assiduous adherence to the IPW65R019C7FKSA1's operational delineations is mandatory, ensuring that the MOSFET operates within its sanctioned voltage and current realms, thus neutralizing potential pitfalls like transient current spikes.

6. Forensic Circuit Evaluation: Post-integration, subjecting the circuit to a meticulous diagnostic run under controlled power metrics is indispensable before transitioning to full-scale operational regimens.

Navigating the integration landscape of the IPW65R019C7FKSA1 necessitates unwavering attention to electrostatic safeguards, given its susceptibility to static-induced anomalies. While sculpting the electronic blueprint with this MOSFET, cross-referencing its datasheet for granular insights related to the IPW65R019C7FKSA1 is advisable.

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6. What is the process for return or replacement of IPW65R019C7FKSA1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPW65R019C7FKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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