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Name: IPW60R060P7XKSA1
Brand: Infineon Technologies
SKU: IPW60R060P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPW60R060P7XKSA1

Part No.:: IPW60R060P7XKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO247-3

Datasheet:: IPW60R060P7XKSA1.pdf

Description:: MOSFET N-CH 600V 48A TO247-3

In Stock:: 2205

Quantity:: Add To Cart

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IPW60R060P7XKSA1 Specifications

Packaging:
Tube
Series:
CoolMOS™ P7
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
600 V
Current-ContinuousDrain(Id)@25°C:
48A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
60mOhm @ 15.9A, 10V
Vgs(th)(Max)@Id:
4V @ 800µA
GateCharge(Qg)(Max)@Vgs:
67 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
2895 pF @ 400 V
FETFeature:
-
PowerDissipation(Max):
164W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

IPW60R060P7XKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPW60R060P7XKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPW60R060P7XKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPW60R060P7XKSA1 information

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IPW60R060P7XKSA1 Typical application Circuitry

The IPW60R060P7XKSA1, a distinguished member of the cutting-edge CoolMOS™ P7 series, is renowned for its impeccable power efficiency, reduced power dissipation, and steadfastness across a plethora of power management endeavors. As a power MOSFET, the IPW60R060P7XKSA1 shines in high-frequency hard switching applications, ensuring leaner designs with its compact size and higher energy savings. Let's dive into the meticulous methodology of interfacing the IPW60R060P7XKSA1 within a circuit landscape, capturing every nuance for an exemplary setup.

1. Blueprint for Seamless Circuit Integration:

- Drain (D): Acting as the primary conduit for current directed towards the load, the Drain terminal's bond should be with one end of the load apparatus. The other extremity of the load seamlessly integrates with either the positive domain of the power source (epitomizing high-side switching frameworks) or grounds itself (emblematic of low-side switching).

- Gate (G): Serving as the MOSFET's operational beacon, this terminal steers the IPW60R060P7XKSA1's conductive or non-conductive states. The pathway to the Gate commences at your control module's terminal, with potential integration of a sequential resistor to regulate switching transients and offer added layers of protection. A gate resistor, nestled between the control pulse generator and the gate, streamlines transitions by taming surges and counteracting potential resonances.

- Source (S): Predominantly anchored to the circuit's ground in elementary switching frameworks, the Source's allegiance, when in high-side switching paradigms, aligns with the load's structure.

2. Embedding Protective Mechanisms:

- Counteracting Diode: Inductive loads bring forth the necessity of an auxiliary diode, juxtaposed parallel to the load. This ensures the IPW60R060P7XKSA1 remains shielded from potentially catastrophic voltage perturbations consequent to inductive releases.

- Gate Preservation: Introducing a zener diode in the space between the gate and source offers sanctuary from voltage transgressions. Concurrently, a judiciously placed resistor curtails the gate's current propensity, armoring the IPW60R060P7XKSA1 against potential electrostatic disruptions.

3. Thermal Oversight: With the IPW60R060P7XKSA1's tendency to generate heat under intense current scenarios, integrating adept heat dissipation modalities, aligned with the stipulated thermal parameters, becomes imperative.

4. Gate Drive Refinements: Optimizing the gate drive for the IPW60R060P7XKSA1 is non-negotiable, often warranting an intermediary driver module or a level converter, particularly when interfaces are managed by low-voltage logic domains.

5. Staying Within Operational Boundaries: Vigilant adherence to the IPW60R060P7XKSA1's circumscribed operational thresholds guarantees that neither voltage nor current trespasses its maximums, circumventing issues like transient overloads.

6. Full-Spectrum Performance Evaluation: Consequent to integrating the circuit, a comprehensive appraisal under moderated power conditions paves the way for full-throttle operational endeavors.

Cognizant handling of the IPW60R060P7XKSA1 is paramount, respecting its vulnerability to electrostatic nuances. As you architect your circuit around this MOSFET, cross-referencing with the IPW60R060P7XKSA1's datasheet ensures fidelity to its unique specifications.

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6. What is the process for return or replacement of IPW60R060P7XKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPW60R060P7XKSA1 we delivered, we will accept the replacement or return of the IPW60R060P7XKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPW60R060P7XKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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