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Name: IPW60R024P7XKSA1
Brand: Infineon Technologies
SKU: IPW60R024P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPW60R024P7XKSA1

Part No.:: IPW60R024P7XKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO247-3-41

Datasheet:: IPW60R024P7XKSA1.pdf

Description:: MOSFET N-CH 650V 101A TO247-3-41

In Stock:: 3236

Quantity:: Add To Cart

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IPW60R024P7XKSA1 Specifications

Packaging:
Tube
Series:
CoolMOS™ P7
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
650 V
Current-ContinuousDrain(Id)@25°C:
101A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
24mOhm @ 42.4A, 10V
Vgs(th)(Max)@Id:
4V @ 2.03mA
GateCharge(Qg)(Max)@Vgs:
164 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
7144 pF @ 400 V
FETFeature:
-
PowerDissipation(Max):
291W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

IPW60R024P7XKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPW60R024P7XKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPW60R024P7XKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPW60R024P7XKSA1 information

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IPW60R024P7XKSA1 Typical application Circuitry

The IPW60R024P7XKSA1, a significant component of the renowned CoolMOS™ P7 family, is acclaimed for its exceptional energy conservation capabilities, reduced power losses, and enhanced robustness, establishing it as a preferred choice in sophisticated power conversion tasks. This specific MOSFET's defining traits include reduced on-resistance and rapid switching, qualities that are indispensable in high-efficiency, compact energy systems. In this discourse, we delve into the meticulous process of embedding the IPW60R024P7XKSA1 within an electrical circuit, highlighting the nuances in the connection blueprint for each pin to guarantee exemplary functionality.

1. Blueprint for Circuit Assimilation:

- Drain (D): This conduit, pivotal for channeling the current to the load, mandates an unobstructed link with the load's terminal. The counterpart of the load connects to the power supply's apex (characteristic of upper echelon switching frameworks) or finds grounding (in instances of lower stratum switching).

- Gate (G): Commandeering the IPW60R024P7XKSA1's operational status, this terminal necessitates a connection stemming from the control circuit's nexus, frequently integrating a series-bound protective resistor to temper the switching cadence and erect a defensive front. An intermediary gate resistor mitigates current influx during state shifts and quells potential resonance.

- Source (S): Generally tethered to the ground in elementary switching schemas, this terminal, under upper-tier switching regimes, affiliates intimately with the load structure.

2. Instituting Defensive Mechanisms:

- Counterflow Diode: In the realm of inductive loads, the IPW60R024P7XKSA1 calls for a collateral diode, co-aligned with the load, to preempt voltage escalations subsequent to inductive recoil, thus safeguarding MOSFET sustainability.

- Gate Conservatory Provisions: Employing a zener diode between gate and source fortifies the IPW60R024P7XKSA1 against voltage influxes, while a gate-embedded resistor truncates current excess, bolstering the MOSFET's resilience to electrostatic perturbations.

3. Heeding Thermal Equilibrium Imperatives: The IPW60R024P7XKSA1's vulnerability to thermal accumulation, particularly during high-current episodes, accentuates the imperative for adept heat diffusion strategies, compliant with delineated thermal resistance norms.

4. Refining Gate Drive Dynamics: Operational excellence with the IPW60R024P7XKSA1 hinges on attaining a gate voltage zenith, often dictating the engagement of a specialized driver circuit or level intermediary, particularly when directives emanate from low-voltage command echelons.

5. Observing Conduct Codes: Rigorous adherence to the IPW60R024P7XKSA1's operational ceilings wards off inadvertent transgressions into prohibited voltage and current territories, circumventing anomalies such as surge currents.

6. Executing an Exhaustive Performance Scrutiny: Subsequent to the integration phase, a regimented inspection under restrained power parameters is paramount prior to sanctioning the circuit for maximal operational exertion.

Manipulating the IPW60R024P7XKSA1 mandates strict compliance with electrostatic discharge stipulations to avert unintended impairments. The incorporation of this MOSFET into electronic designs should be orchestrated with scrupulous adherence to its datasheet, encapsulating the subtleties and benchmarks specific to the IPW60R024P7XKSA1.

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6. What is the process for return or replacement of IPW60R024P7XKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPW60R024P7XKSA1 we delivered, we will accept the replacement or return of the IPW60R024P7XKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPW60R024P7XKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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