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Name: IPT60R028G7XTMA1
Brand: Infineon Technologies
SKU: IPT60R028G7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPT60R028G7XTMA1

Part No.:: IPT60R028G7XTMA1

Manufacturer:: Infineon Technologies

Package:: PG-HSOF-8-2

Datasheet:: IPT60R028G7XTMA1.pdf

Description:: MOSFET N-CH 600V 75A 8HSOF

In Stock:: 2842

Quantity:: Add To Cart

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IPT60R028G7XTMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
CoolMOS™ G7
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
600 V
Current-ContinuousDrain(Id)@25°C:
75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
28mOhm @ 28.8A, 10V
Vgs(th)(Max)@Id:
4V @ 1.44mA
GateCharge(Qg)(Max)@Vgs:
123 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
4820 pF @ 400 V
FETFeature:
-
PowerDissipation(Max):
391W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IPT60R028G7XTMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPT60R028G7XTMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPT60R028G7XTMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPT60R028G7XTMA1 information

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IPT60R028G7XTMA1 Typical application Circuitry

The IPT60R028G7XTMA1, a member of the esteemed CoolMOS™ G7 family, is renowned for its impressive efficiency, reduced power losses, and robust performance under various challenging conditions. This state-of-the-art MOSFET encapsulates cutting-edge technology geared towards superior energy conservation and streamlined power management, integral to numerous high-performance applications. In delving into the specifics of incorporating the IPT60R028G7XTMA1 into a functional circuit, it is pivotal to elucidate the connection methodologies pertinent to each pin, ensuring an exemplary standard of operational efficiency and reliability.

1. Blueprint for Circuit Assimilation:

- Drain (D): This terminal is integral to the current's trajectory, channeling it efficiently toward the load. It necessitates a secure connection with the load's respective terminal. The load's alternate end connects to the supply voltage (in high-side configurations) or establishes a connection with the ground (prevalent in low-side configurations).

- Gate (G): Representing the command nexus of the IPT60R028G7XTMA1, the Gate terminal's connectivity extends from the control circuitry, potentially encompassing a series-connected resistor, safeguarding the gate and modulating the switching characteristics. The inclusion of a specific gate resistor between the control signal and the gate terminal itself mitigates the risk of oscillations and moderates the inrush of gate current.

- Source (S): This terminal, generally interfaced with the ground in more simplified switch layouts, associates directly with the load in configurations involving high-side switching.

2. Defensive Mechanisms Integration:

- Counteractive Diode: When the IPT60R028G7XTMA1 operates with inductive loads, it's imperative to utilize a diode, strategically aligned in parallel to the load, safeguarding the MOSFET against detrimental voltage spikes consequent to inductive reactions.

- Gate Protective Stratagems: Implementing a zener diode amidst the gate and source terminals fortifies the IPT60R028G7XTMA1 against voltage excesses. Concurrently, a resistor nestled within the gate's circuitry diminishes current peaks, bolstering the MOSFET's resilience.

3. Regulating Thermal Dynamics: Operating with high currents, the IPT60R028G7XTMA1 is predisposed to thermal accumulation, necessitating adept heat management solutions in adherence to specified thermal conductance parameters.

4. Refining Gate Drive Parameters: For the IPT60R028G7XTMA1 to operate flawlessly, attaining an optimal gate voltage is quintessential, frequently requiring an intermediary circuit or a level converter when operated alongside low-voltage control frameworks.

5. Upholding Specified Directives: Ensuring compliance with the IPT60R028G7XTMA1's outlined operational maxima precludes inadvertent transgressions of voltage and current norms, safeguarding the system against transient surges or inrush currents.

6. In-Depth Functional Scrutiny: Subsequent to the circuit integration, an exhaustive evaluation under scaled-down power scenarios is paramount, precluding potential malfunctions prior to full-scale operational deployment.

Precise engagement with the IPT60R028G7XTMA1 mandates stringent adherence to electrostatic discharge precautions, forestalling unintentional impairments. The instantiation of this MOSFET within a designated electronic assembly mandates rigorous adherence to its datasheet specifications, tailoring the approach to accommodate the IPT60R028G7XTMA1's operational nuances.

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6. What is the process for return or replacement of IPT60R028G7XTMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPT60R028G7XTMA1 we delivered, we will accept the replacement or return of the IPT60R028G7XTMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPT60R028G7XTMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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