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Name: IPT012N08N5ATMA1
Brand: Infineon Technologies
SKU: IPT012N08N5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPT012N08N5ATMA1

Part No.:: IPT012N08N5ATMA1

Manufacturer:: Infineon Technologies

Package:: PG-HSOF-8-1

Datasheet:: IPT012N08N5ATMA1.pdf

Description:: MOSFET N-CH 80V 300A 8HSOF

In Stock:: 3174

Quantity:: Add To Cart

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IPT012N08N5ATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
80 V
Current-ContinuousDrain(Id)@25°C:
300A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
1.2mOhm @ 150A, 10V
Vgs(th)(Max)@Id:
3.8V @ 280µA
GateCharge(Qg)(Max)@Vgs:
223 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
17000 pF @ 40 V
FETFeature:
-
PowerDissipation(Max):
375W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

IPT012N08N5ATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPT012N08N5ATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPT012N08N5ATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPT012N08N5ATMA1 information

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IPT012N08N5ATMA1 Typical application Circuitry

The IPT012N08N5ATMA1 is a prominent member of the OptiMOS™ series, renowned for a blend of low on-resistance and dynamic performance, making it integral in scenarios that require high efficiency and power-density. This MOSFET excels in fast-switching applications and is crucial in areas demanding energy-savvy components, such as in power supplies or motor control units. In this discussion, we dive into the specifics of incorporating the IPT012N08N5ATMA1 into your circuitry, emphasizing the precision required for each pin and connection to guarantee optimal functionality.

1. Strategic Circuit Implementation:

- Drain (D): Acting as the conduit for the main current flowing towards the load, the 'Drain' terminal of the IPT012N08N5ATMA1 connects securely to the load's endpoint. The other terminal of the load is then bridged either to the supply voltage's positive spectrum (common in high-side switching) or the ground (in low-side switching scenarios).

- Gate (G): The 'Gate' terminal, a linchpin in the conductive control of the IPT012N08N5ATMA1, aligns with the output terminus of your control circuit. It is prudent to have a series resistor within this connection, fostering a controlled switching environment and offering protection. An intermediary gate resistor is advisable to thwart oscillations and temper the gate current during the switching episodes.

- Source (S): Regularly tied to the ground in more basic switch configurations, the 'Source' terminal, in high-side switch methodologies, requires a direct linkage with the load apparatus.

2. Embracing Protective Measures:

- Recirculation Diode: The IPT012N08N5ATMA1, when utilized with inductive loads, advocates for a companion diode alongside the load. This strategy is a defense mechanism, countering voltage surges resultant from inductive recoil, a typical scenario in motor control circuits.

- Gate Defense Mechanisms: Instituting a zener diode between the gate and source affords a buffer against potential over-voltage, while a resistor situated in the gate's circuitry minimizes current surges, safeguarding the IPT012N08N5ATMA1's sensitive gate structure.

3. Navigating Thermal Challenges: Operating the IPT012N08N5ATMA1 at high currents naturally ushers in thermal concerns. Effective heat management, in sync with outlined thermal resistance specifications, is essential for maintaining the MOSFET's integrity and performance.

4. Coordinating the Gate Drive: The IPT012N08N5ATMA1 demands an accurate gate threshold voltage for impeccable operation. This precision often involves a dedicated driver circuit, particularly when the control logic operates at lower voltages.

5. Compliance and Operational Norms: Staying within the IPT012N08N5ATMA1's operational confines is non-negotiable. It's vital to ensure that the current and voltage parameters do not overstep the MOSFET's defined maxima, thereby averting phenomena like inrush currents.

6. Post-Integration Evaluation: Finalizing the setup mandates a thorough vetting process. Initiate this with a low-power test run, scrutinizing the circuit's behavior and thermal performance before transitioning to full power.

The IPT012N08N5ATMA1, sensitive to electrostatic discharges, necessitates careful handling, mandating strict adherence to ESD precautions. Tailoring its integration to the precise stipulations outlined in its datasheet ensures its longevity and efficient functioning.

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6. What is the process for return or replacement of IPT012N08N5ATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPT012N08N5ATMA1 we delivered, we will accept the replacement or return of the IPT012N08N5ATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPT012N08N5ATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations