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Name: IPP65R190CFDXKSA2
Brand: Infineon Technologies
SKU: IPP65R190CFDXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPP65R190CFDXKSA2

Part No.:: IPP65R190CFDXKSA2

Manufacturer:: Infineon Technologies

Package:: PG-TO220-3

Datasheet:: IPP65R190CFDXKSA2.pdf

Description:: MOSFET N-CH 650V 17.5A TO220-3

In Stock:: 3984

Quantity:: Add To Cart

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IPP65R190CFDXKSA2 Specifications

Packaging:
Tube
Series:
CoolMOS™ CFD2
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
650 V
Current-ContinuousDrain(Id)@25°C:
17.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
190mOhm @ 7.3A, 10V
Vgs(th)(Max)@Id:
4.5V @ 700µA
GateCharge(Qg)(Max)@Vgs:
68 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1850 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
151W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

IPP65R190CFDXKSA2 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPP65R190CFDXKSA2 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPP65R190CFDXKSA2 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPP65R190CFDXKSA2 information

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IPP65R190CFDXKSA2 Typical application Circuitry

The IPP65R190CFDXKSA2 is an integral component of the CoolMOS™ CFD7A series, recognized for its breakthrough performance in energy conservation, minimal conduction losses, and exceptional durability, solidifying its status in high-efficiency power conversion tasks. This specific MOSFET, with its rapid switching capabilities and diminished resistance during operation, is quintessential for applications that prioritize energy thriftiness and compact power density. In the subsequent analysis, we delve into the nuanced methodology of embedding the IPP65R190CFDXKSA2 into an electronic circuit, emphasizing the exactitude of connection paradigms for the pinnacle of functionality.

1. Blueprint for Pristine Circuit Assimilation:

- Drain (D): As the conduit for current destined for the load, the Drain necessitates an unmediated linkage with the load's terminal. The counterpart of the load then finds itself either juxtaposed with the supply voltage's zenith (a hallmark of high-side switch mechanisms) or grounded, common in low-side switch instances.

- Gate (G): The epicenter of control, this terminal, dictates the operational status of the IPP65R190CFDXKSA2. It extends a connection from the juncture where the control circuit culminates, often enlisting a resistor in its series for defensive modulation of the switching trajectory. A strategically interspersed gate resistor mitigates the rush of current in transitional phases and curtails resonant propensities.

- Source (S): Predominantly interfaced with the ground in elementary switch designs, this terminal, within the high-side switching landscape, engages directly with the load.

2. Entrenchment of Protective Mechanisms:

- Counteractive Diode: The IPP65R190CFDXKSA2, when operational with inductive loads, commands a supplementary diode, aligned in parallelism with the load. This constellation staunchly defends against the onslaught of voltage transients in the wake of inductive releases, preserving the MOSFET's structural and functional integrity.

- Gate Defenses: Instituting a zener diode, bridging the gate and source, erects a fortress against voltage influxes, while an in-line resistor within the gate's circuitry dampens the current surge, immunizing the IPP65R190CFDXKSA2 against electrostatic perturbations.

3. Heat Dissipation Directives: The IPP65R190CFDXKSA2's vulnerability to thermal escalation, particularly during current-intensive periods, accentuates the imperative for adept heat mitigation strategies, synchronized with the stipulated thermal conductance norms.

4. Gate Drive Refinements: Operational excellence with the IPP65R190CFDXKSA2 requires mastery over the gate voltage threshold, occasionally summoning a dedicated intermediary circuitry or level adaptation, particularly when control signals are of a low-voltage pedigree.

5. Compliance with Specified Regimens: Rigorous adherence to the IPP65R190CFDXKSA2's delineated operational benchmarks ensures that neither voltage nor current indices transgress their sanctioned confines, thereby circumventing aberrations such as inrush current phenomena.

6. Exhaustive Functional Scrutiny: Following circuit integration, a rigorous appraisal under restrained power benchmarks is indispensable, preceding any endorsement for maximal operational exertion.

Mandatory in the manipulation of the IPP65R190CFDXKSA2 is strict observance of electrostatic discharge protocols, preempting unintentional impairments.

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6. What is the process for return or replacement of IPP65R190CFDXKSA2?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPP65R190CFDXKSA2 we delivered, we will accept the replacement or return of the IPP65R190CFDXKSA2 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPP65R190CFDXKSA2.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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