IPP65R190CFDXKSA1

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Infineon Technologies IPP65R190CFDXKSA1

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Part No.:
IPP65R190CFDXKSA1
Manufacturer:
Infineon Technologies
Package:
PG-TO220-3
Datasheet:
IPP65R190CFDXKSA1.pdf
Description:
MOSFET N-CH 650V 17.5A TO220-3
In Stock:
2618
Quantity:
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  • Purchase and inquiryPurchase and inquiry

    IPP65R190CFDXKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPP65R190CFDXKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPP65R190CFDXKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    IPP65R190CFDXKSA1 informationIPP65R190CFDXKSA1 information

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    IPP65R190CFDXKSA1 Typical application Circuitry


    The IPP65R190CFDXKSA1, a flagship product from the CoolMOS™ CFD series, is distinguished by its unparalleled efficiency, low energy losses, and robust construction. A hallmark in the realm of power electronics, this MOSFET is specifically engineered for swift switching applications with minimal on-resistance, embodying the future of energy-efficient designs. For those keen on harnessing the potential of the IPP65R190CFDXKSA1, a deep dive into its integration specifics is essential.

    1. Blueprint for Circuit Integration:

    - Drain (D): Serving as the primary conduit for current destined for the load, the Drain is typically aligned directly with one segment of the load. The other segment interfaces either with the power source's positive terminal (in the context of high-side switches) or directly with the grounding terminal (during low-side switching operations).

    - Gate (G): The pivotal control hub of the IPP65R190CFDXKSA1, the Gate, determines the device's conduction state. Typically, a control circuit's output aligns with this terminal, often mediated by a series resistor to modulate switch dynamics and offer an additional protective layer. An intermediary gate resistor, situated between the gate and the control signal origin, ensures the containment of transient current spikes.

    - Source (S): While often tethered to the ground in rudimentary switching configurations, the Source, in more intricate high-side setups, engages directly with the load.

    2. Defensive Mechanisms:

    - Counteracting Diode: With the IPP65R190CFDXKSA1 in play, especially for inductive loads, a parallel diode becomes imperative. This diode acts as a sentry against voltage perturbations, stemming from inductive surges, thereby ensuring the MOSFET's longevity.

    - Gate Fortifications: A protective ensemble, comprising a zener diode bridging the gate and source, acts as a bulwark against voltage excursions. Concurrently, a current-restricting resistor on the gate pathway tempers any excesses, thereby insulating the IPP65R190CFDXKSA1 from potential pitfalls.

    3. Thermal Oversight: Recognizing the IPP65R190CFDXKSA1's susceptibility to thermal accumulation under hefty current loads, implementing astute heat dissipation strategies in compliance with established thermal benchmarks is paramount.

    4. Gate Impulse Refinements: For the IPP65R190CFDXKSA1 to function at its zenith, attaining the requisite gate voltage threshold is non-negotiable. In instances where control signals are of a low-voltage nature, the introduction of a dedicated driver circuit or a voltage translator becomes a necessity.

    5. Compliance Matrix: Ensuring that the IPP65R190CFDXKSA1 operates within its delineated parameters is a pre-requisite, guarding against the transgression of its voltage and current boundaries.

    6. In-depth System Verification: Post assembly, subjecting the circuit to a rigorous assessment under constrained power settings is a prelude to full-scale operational deployment.

    Ensuring the IPP65R190CFDXKSA1's longevity requires meticulous handling, given its sensitivity to static environments. As always, cross-referencing with the MOSFET's datasheet offers invaluable insights into its intrinsic specifications, and professional expertise should be sought in multifaceted applications.

    IPP65R190CFDXKSA1 FAQ

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    3. Are the IPP65R190CFDXKSA1 price and inventory displayed accurate?

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    6. What is the process for return or replacement of IPP65R190CFDXKSA1?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPP65R190CFDXKSA1 we delivered, we will accept the replacement or return of the IPP65R190CFDXKSA1 only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of IPP65R190CFDXKSA1.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

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