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Name: IPP65R190CFDAAKSA1
Brand: Infineon Technologies
SKU: IPP65R190CFDAAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPP65R190CFDAAKSA1

Part No.:: IPP65R190CFDAAKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO220-3

Datasheet:: IPP65R190CFDAAKSA1.pdf

Description:: MOSFET N-CH 650V 17.5A TO220-3

In Stock:: 3872

Quantity:: Add To Cart

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IPP65R190CFDAAKSA1 Specifications

Packaging:
Tube
Series:
Automotive, AEC-Q101, CoolMOS™
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
650 V
Current-ContinuousDrain(Id)@25°C:
17.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
190mOhm @ 7.3A, 10V
Vgs(th)(Max)@Id:
4.5V @ 700µA
GateCharge(Qg)(Max)@Vgs:
68 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1850 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
151W (Tc)
OperatingTemperature:
-40°C ~ 150°C (TJ)
MountingType:
Through Hole

IPP65R190CFDAAKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPP65R190CFDAAKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPP65R190CFDAAKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPP65R190CFDAAKSA1 information

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IPP65R190CFDAAKSA1 Typical application Circuitry

The IPP65R190CFDAAKSA1, a key member of the CoolMOS™ CFD7A series, is renowned for its exceptional energy conservation, reduced power dissipation, and enhanced robustness, all crucial for high-performance power conversion tasks. This MOSFET's distinguishing features include rapid switching capabilities and an impressively low on-resistance, significantly boosting energy efficiency and power density. In this guide, we delve into the nuanced approach necessary for embedding the IPP65R190CFDAAKSA1 into an electronic circuit, with detailed connection methodologies for each pin to ensure peak performance.

1. Precision in Circuit Integration Steps:

- Drain (D): As the conduit for the main current directed to the load, the Drain necessitates a secure linkage to the load's respective terminal. The other segment of the load aligns with either the positive pole of the power supply (common in high-side switching) or the ground (in low-side switching arrangements).

- Gate (G): This pivotal control terminal governs the IPP65R190CFDAAKSA1's operational phases. Its connection extends from the controlling unit's signal, often employing a resistor in series for protective insulation and controlled switching dynamics. Positioning a gate resistor within the interlinking node of the control signal and the gate helps regulate the influx during switching episodes and counteracts any resonant propensities.

- Source (S): Typically linked to the ground in most straightforward switch configurations, the Source establishes its connection with the load in high-side switching schemas.

2. Strategic Placement of Protective Elements:

- Clamping Diode: When the IPP65R190CFDAAKSA1 operates with inductive loads, an essential parallel diode becomes instrumental in safeguarding the MOSFET from hazardous voltage surges post-inductive reactions.

- Gate Defense Mechanisms: Employing a zener diode within the gate and source junction serves as a fortress against voltage excesses, whereas a strategically embedded resistor within the gate's circuitry impedes undue current flow, reinforcing the IPP65R190CFDAAKSA1's defenses against electrostatic disruptions.

3. Managing Heat Dispersion: The IPP65R190CFDAAKSA1's potential to accumulate heat, particularly during heavy current flow, highlights the imperative for adept heat diffusion strategies, adhering to the outlined thermal resistance parameters.

4. Tailoring the Gate Drive: The IPP65R190CFDAAKSA1 requires an explicit gate voltage threshold for flawless functioning, often dictating the use of an auxiliary driver circuit or level converter, particularly when the control signals derive from low-voltage frameworks.

5. Compliance with Specified Boundaries: Upholding the IPP65R190CFDAAKSA1's operational guidelines is critical, ensuring that neither voltage nor current metrics breach the sanctioned ceilings, thereby averting phenomena like inrush currents.

6. Exhaustive Preliminary Assessments: Following the circuit's integration, a rigorous inspection under scaled-down power parameters is indispensable before clearance for full-scale operational deployment.

The handling of the IPP65R190CFDAAKSA1 mandates strict adherence to electrostatic discharge standards, warding off unintended impairments. The integration of this MOSFET within any circuitry should be executed with due diligence, referencing its specific datasheet for the IPP65R190CFDAAKSA1's nuanced details.

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6. What is the process for return or replacement of IPP65R190CFDAAKSA1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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(3)The PartNo is unused and only in the original unpacked packaging.

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