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Name: IPP60R099C6XKSA1
Brand: Infineon Technologies
SKU: IPP60R099C6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPP60R099C6XKSA1

Part No.:: IPP60R099C6XKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO220-3

Datasheet:: IPP60R099C6XKSA1.pdf

Description:: MOSFET N-CH 600V 37.9A TO220-3

In Stock:: 2592

Quantity:: Add To Cart

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IPP60R099C6XKSA1 Specifications

Packaging:
Tube
Series:
CoolMOS™
ProductStatus:
Not For New Designs
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
600 V
Current-ContinuousDrain(Id)@25°C:
37.9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
99mOhm @ 18.1A, 10V
Vgs(th)(Max)@Id:
3.5V @ 1.21mA
GateCharge(Qg)(Max)@Vgs:
119 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
2660 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
278W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Through Hole

IPP60R099C6XKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPP60R099C6XKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPP60R099C6XKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPP60R099C6XKSA1 information

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IPP60R099C6XKSA1 Typical application Circuitry

The IPP60R099C6XKSA1, stemming from the esteemed CoolMOS™ C6 series, is an emblem of pioneering power MOSFET technology. Esteemed for its advanced power conversion efficacy, minimal resistive losses, and stellar durability, the IPP60R099C6XKSA1 is frequently sought after in applications necessitating cutting-edge energy management. It thrives in setups that prioritize fast-switching efficiency, minimized conduction losses, and maximized reliability. With a precise understanding of interfacing the IPP60R099C6XKSA1, one can truly harness its sophisticated potential in various electronic setups.

1. Blueprint for Effective Circuit Incorporation:

- Drain (D): This terminal, responsible for steering the main load current, mandates a direct linkage to one facet of the designated load. Its counterpart would be affixed either to the supply's positive terminal (indicative of high-side configurations) or directly to the system ground (common in low-side configurations).

- Gate (G): As the modulatory nerve center of the IPP60R099C6XKSA1, the Gate orchestrates its active or inactive state. Its connectivity emerges from the designated control circuit's end-point, potentially interposing a resistor to fine-tune the switching dynamics and deliver an added protection layer. Moreover, an interposed gate resistor can serve as a guard against transient oscillations and mitigate the switching current surge.

- Source (S): While traditionally tethered to the system ground in most switching paradigms, the Source, when entangled in high-side switch setups, makes a direct connection to the load.

2. Indispensable Protective Elements:

- Clamping Diode: When in the realm of inductive loads, the IPP60R099C6XKSA1 benefits from an auxiliary diode, conjoined parallelly with the load. This configuration mitigates voltage transients, curbing the potential harm caused by inductive rebounds, thereby safeguarding the MOSFET's lifespan.

- Gate Preservation: A defensive overlay involving a zener diode, nestled between the gate and source, fortifies the IPP60R099C6XKSA1 against unwarranted voltage escalations. Additionally, a strategically placed resistor within the gate pathway attenuates undue current influxes, reinforcing the component's protection.

3. Heat Mitigation Strategies: The inherent nature of the IPP60R099C6XKSA1 to accumulate thermal energy under hefty current scenarios underlines the need for adept thermal dissipation methods, matching the outlined thermal resistance benchmarks.

4. Scrutinizing the Gate Drive: To unlock the full prowess of the IPP60R099C6XKSA1, achieving the right gate voltage remains a non-negotiable. This often warrants an auxiliary driver circuit or level translator, more so when aligning with low-voltage control frameworks.

5. Unwavering Commitment to Specified Parameters: Rigorous adherence to the IPP60R099C6XKSA1's laid-out operational metrics is indispensable, guaranteeing that neither voltage nor current overshoots the stipulated caps, thus avert potential pitfalls.

6. All-Encompassing Circuit Evaluation: Once the circuit assimilates the IPP60R099C6XKSA1, an exhaustive validation under restrained power parameters is of paramount importance before transitioning to peak operational modalities.

In culmination, the IPP60R099C6XKSA1 warrants respectful handling, cognizant of its electrostatic sensitivities. Any application or deployment should take cues from its comprehensive datasheet, accentuating the nuances unique to the IPP60R099C6XKSA1.

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6. What is the process for return or replacement of IPP60R099C6XKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPP60R099C6XKSA1 we delivered, we will accept the replacement or return of the IPP60R099C6XKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPP60R099C6XKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations