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Name: IPP200N25N3GXKSA1
Brand: Infineon Technologies
SKU: IPP200N25N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPP200N25N3GXKSA1

Part No.:: IPP200N25N3GXKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO220-3

Datasheet:: IPP200N25N3GXKSA1.pdf

Description:: MOSFET N-CH 250V 64A TO220-3

In Stock:: 2437

Quantity:: Add To Cart

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IPP200N25N3GXKSA1 Specifications

Packaging:
Bulk,Tube
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
250 V
Current-ContinuousDrain(Id)@25°C:
64A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
20mOhm @ 64A, 10V
Vgs(th)(Max)@Id:
4V @ 270µA
GateCharge(Qg)(Max)@Vgs:
86 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
7100 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
300W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IPP200N25N3GXKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPP200N25N3GXKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPP200N25N3GXKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPP200N25N3GXKSA1 information

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IPP200N25N3GXKSA1 Typical application Circuitry

The IPP200N25N3GXKSA1 is a member of the OptiMOS™ N-channel power MOSFET series, renowned for its high energy efficiency, rapid switching capabilities, and remarkable thermal performance. This series is especially crafted to deliver optimal solutions in high-frequency switching applications, minimizing power loss and maximizing energy savings. With an understanding of the fundamental characteristics of the IPP200N25N3GXKSA1, it's imperative to delve into the specific methodology for integrating it into a circuit with an accent on pin-level accuracy.

1. Elaborating the Circuit Integration Strategy:

- Drain (D): Act as the primary conduit for current directed towards the load. Establish a direct linkage from the 'Drain' terminal to one terminal of your desired load. Subsequently, the other terminal of the load can be interfaced either with the positive terminal of your power supply (for high-side switching scenarios) or anchored to the ground (when low-side switching is employed).

- Gate (G): Recognized as the central command hub, the 'Gate' terminal modulates the operational state of the IPP200N25N3GXKSA1. Ensure a connection from this terminal to the emanating point of your control circuit. It's prudent to consider the inclusion of a series resistor, aiding in safeguarding the MOSFET and modulating its switching characteristics. Furthermore, integrating a gate resistor between the control signal's origin and the gate helps in curbing potential oscillations and managing current surges during transitions.

- Source (S): Predominantly, in basic switch designs, this terminal is grounded. However, in high-side switching paradigms, the 'Source' is interfaced with the load.

2. Indispensable Protection Mechanisms:

- Diode Integration: For inductive load applications, it's vital to integrate a diode parallelly, shielding the IPP200N25N3GXKSA1 against potential voltage spikes that emanate from inductive releases.

- Guarding the Gate: An integrated zener diode, bridged between the gate and source, can serve as a protective layer against inadvertent voltage peaks. Additionally, considering the incorporation of a resistor within the gate's linkage can offer resistance against excessive current influx.

3. Managing Thermal Dynamics: Given the inherent nature of the IPP200N25N3GXKSA1 to produce heat, especially when catering to significant currents, adept heat management techniques, aligned with its thermal resistance parameters, are essential.

4. Tailoring the Gate Drive: For the IPP200N25N3GXKSA1 to function flawlessly, the appropriate gate voltage threshold must be met. This often necessitates the incorporation of auxiliary driver circuits or level translators, especially when interfacing with low-voltage control systems.

5. Strict Compliance with Defined Parameters: It's paramount to operate the IPP200N25N3GXKSA1 within its stipulated operational boundaries, ensuring that current and voltage parameters remain within their designated confines.

6. Execution of a Comprehensive Test Regime: Once the circuit is operational, instigate a series of diagnostic tests under moderated power conditions, pre-emptively addressing potential issues before transitioning to maximum power operations.

While the IPP200N25N3GXKSA1 promises optimal performance, its susceptibility to electrostatic disruptions warrants meticulous handling and grounding procedures. For a nuanced understanding of this MOSFET's capabilities, referencing its detailed datasheet is essential. Moreover, engaging with electronic professionals can be beneficial, especially in more intricate circuit designs involving the IPP200N25N3GXKSA1.

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6. What is the process for return or replacement of IPP200N25N3GXKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPP200N25N3GXKSA1 we delivered, we will accept the replacement or return of the IPP200N25N3GXKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPP200N25N3GXKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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