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Name: IPP075N15N3GXKSA1
Brand: Infineon Technologies
SKU: IPP075N15N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPP075N15N3GXKSA1

Part No.:: IPP075N15N3GXKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO220-3

Datasheet:: IPP075N15N3GXKSA1.pdf

Description:: MOSFET N-CH 150V 100A TO220-3

In Stock:: 979

Quantity:: Add To Cart

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IPP075N15N3GXKSA1 Specifications

Packaging:
Tube
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
150 V
Current-ContinuousDrain(Id)@25°C:
100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
8V, 10V
RdsOn(Max)@IdVgs:
7.5mOhm @ 100A, 10V
Vgs(th)(Max)@Id:
4V @ 270µA
GateCharge(Qg)(Max)@Vgs:
93 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
5470 pF @ 75 V
FETFeature:
-
PowerDissipation(Max):
300W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IPP075N15N3GXKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPP075N15N3GXKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPP075N15N3GXKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPP075N15N3GXKSA1 information

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IPP075N15N3GXKSA1 Typical application Circuitry

The IPP075N15N3GXKSA1 is a formidable MOSFET from the renowned OptiMOS™ 3 series. Recognized for its unparalleled energy efficiency, reduced power dissipation, and steadfast reliability, this MOSFET is a prime choice for many state-of-the-art power electronics applications. Distinguished by its swift switching capabilities and impressively low on-resistance, the IPP075N15N3GXKSA1 excels in delivering performance with remarkable energy conservation. Let's delve into the quintessential methodology to integrate the IPP075N15N3GXKSA1 into your circuit, underlining the nuances of each pin connection.

1. Blueprint for Circuit Integration:

- Drain (D): Acting as the main conduit for load-centric current flow, this terminal necessitates a direct liaison with one segment of the intended load. The opposing segment either marries with the positive facet of your power source (when contemplating high-side switching) or establishes ground connectivity (in low-side switching paradigms).

- Gate (G): Manifesting as the command hub, this terminal determines the conductive disposition of the IPP075N15N3GXKSA1. The linkage spans from the output node of your control mechanism, potentially incorporating a select resistor in series for enhanced switch management and innate protection. Additionally, a judiciously chosen gate resistor, nestled between the gate and the signaling source, ensures controlled current during transitions and wards off potential resonances.

- Source (S): Predominantly tethered to the ground in elementary switching configurations, this terminal, when envisioned within a high-side switch framework, conjoins directly with the load.

2. Layering Protective Mechanisms:

- Recirculation Diode Integration: When the IPP075N15N3GXKSA1 interfaces with inductive loads, a parallelly-aligned diode becomes indispensable. This configuration safeguards the MOSFET against unforeseen voltage surges, an aftermath of inductive rebounds.

- Gate Defense Matrix: Embedding a zener diode between the gate and source fortifies the IPP075N15N3GXKSA1 against voltage excursions. Simultaneously, a strategically placed resistor on the gate pathway restricts deleterious current inflow, ensuring MOSFET longevity.

3. Thermal Dynamics and Mitigation: The IPP075N15N3GXKSA1, under heavy current scenarios, may exhibit thermal accrual. Implementing adept heat dissipation strategies, compliant with stipulated thermal resistance benchmarks, is of paramount importance.

4. Gate Drive Protocols: For the IPP075N15N3GXKSA1 to function at its pinnacle, precise gate voltage levels must be maintained. Often, this mandates specialized driver modules or level conversion apparatus, especially if the control signals are borne from low-voltage platforms.

5. Regulatory Compliance: Vigilance in adhering to the IPP075N15N3GXKSA1's delineated operating thresholds ensures the device's seamless operation, safeguarding against transient or anomalous conditions.

6. Circuit Validation: Post-construction, a meticulous appraisal under scaled-down power regimes is pivotal, paving the way for full-throttle operational deployments.

With the IPP075N15N3GXKSA1, meticulous observance of electrostatic handling guidelines is non-negotiable, mitigating potential component degradation. As with all advanced components, it's imperative to juxtapose your design with the IPP075N15N3GXKSA1's datasheet, ensuring alignment with its intricate specifications.

IPP075N15N3GXKSA1 FAQ

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6. What is the process for return or replacement of IPP075N15N3GXKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPP075N15N3GXKSA1 we delivered, we will accept the replacement or return of the IPP075N15N3GXKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPP075N15N3GXKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations