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Name: IPP075N15N3GHKSA1
Brand: Infineon Technologies
SKU: IPP075N15N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies IPP075N15N3GHKSA1

Part No.:: IPP075N15N3GHKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO220-3

Datasheet:: IPP075N15N3GHKSA1.pdf

Description:: MOSFET N-CH 150V 100A TO220-3

In Stock:: 2536

Quantity:: Add To Cart

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IPP075N15N3GHKSA1 Specifications

Packaging:
Tube
Series:
OptiMOS™
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
150 V
Current-ContinuousDrain(Id)@25°C:
100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
8V, 10V
RdsOn(Max)@IdVgs:
7.5mOhm @ 100A, 10V
Vgs(th)(Max)@Id:
4V @ 270µA
GateCharge(Qg)(Max)@Vgs:
93 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
5470 pF @ 75 V
FETFeature:
-
PowerDissipation(Max):
300W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IPP075N15N3GHKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPP075N15N3GHKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPP075N15N3GHKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPP075N15N3GHKSA1 information

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IPP075N15N3GHKSA1 Typical application Circuitry

The IPP075N15N3GHKSA1 hails from the OptiMOS™ 3 family, a renowned series celebrated for its advanced power management, outstanding energy efficiency, and minimized switching losses. Serving as a cornerstone in a myriad of sophisticated power conversion applications, this MOSFET promises enhanced performance and reliability. In this guide, we delve into the nuances of integrating the IPP075N15N3GHKSA1 into a circuit framework, focusing on precise connection strategies for each pin to harness its full potential.

1. Drain (D): Acting as the conduit for current destined for the load, this terminal should be tied directly to one portion of the intended load. The counterpart of the load either secures a connection with the power supply's upper echelon (when dealing with high-side switching paradigms) or finds its anchor in the ground (in low-side switching configurations).

2. Gate (G): Serving as the MOSFET's helm, the Gate terminal directs the operational status of the IPP075N15N3GHKSA1. This point of control extends a link to the corresponding control circuit's output. It's commonplace to have a series resistor in this pathway, fulfilling dual roles: offering protection and refining the switching dynamics. A gate resistor, positioned judiciously between the control node and the gate, curbs sudden current surges and stymies potential oscillations.

3. Source (S): While the Source terminal often finds a stable connection with the ground in simplistic switching schemas, in high-side switch setups, it forges a direct link with the load.

4. Embracing Protective Mechanisms:

- Diode Implementation: The very nature of inductive loads makes them prone to generating voltage spikes. Thus, when the IPP075N15N3GHKSA1 interfaces with such loads, the integration of a diode parallelly becomes crucial, offering a safety net against these potentially harmful spikes.

- Gate Preservation: To shield the gate against voltage excursions, a zener diode finds its place between the gate and source. Moreover, a current-restricting resistor, strategically introduced within the gate's trajectory, augments this protective mechanism.

5. Thermodynamic Considerations: Given that the IPP075N15N3GHKSA1 can experience thermal elevations when managing substantial currents, proactive thermal management, consistent with established thermal resistance benchmarks, is indispensable.

6. Refining Gate Drive Dynamics: To unlock the IPP075N15N3GHKSA1's optimal performance, it's crucial to ensure that the gate voltage aligns with specified parameters. In instances where the control logic operates at lower voltages, a dedicated driver or a level converter becomes a necessity.

7. Observing Specified Regimes: Ensuring that the operational dynamics of the IPP075N15N3GHKSA1 remain within prescribed limits safeguards the device against potential pitfalls. This entails vigilance against overshooting voltage and current thresholds and precludes transient anomalies.

8. Post-Integration Scrutiny: Once the IPP075N15N3GHKSA1 finds its place within the circuit, a systematic review under restrained power conditions offers insights into its readiness for full-scale operation.

Engaging with the IPP075N15N3GHKSA1 demands a methodical approach, underpinned by adherence to stipulated electrostatic discharge protocols. For a nuanced understanding of its capabilities and constraints, periodic consultation of its specific datasheet is advised, ensuring that the IPP075N15N3GHKSA1 delivers on its promise in any electronic setup.

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6. What is the process for return or replacement of IPP075N15N3GHKSA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPP075N15N3GHKSA1 we delivered, we will accept the replacement or return of the IPP075N15N3GHKSA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPP075N15N3GHKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations