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Name: IPP023N10N5AKSA1
Brand: Infineon Technologies
SKU: IPP023N10N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IPP023N10N5AKSA1

Part No.:: IPP023N10N5AKSA1

Manufacturer:: Infineon Technologies

Package:: PG-TO220-3

Datasheet:: IPP023N10N5AKSA1.pdf

Description:: MOSFET N-CH 100V 120A TO220-3

In Stock:: 2261

Quantity:: Add To Cart

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IPP023N10N5AKSA1 Specifications

Packaging:
Tube
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
2.3mOhm @ 100A, 10V
Vgs(th)(Max)@Id:
3.8V @ 270µA
GateCharge(Qg)(Max)@Vgs:
210 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
15600 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
375W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Through Hole

IPP023N10N5AKSA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IPP023N10N5AKSA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IPP023N10N5AKSA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IPP023N10N5AKSA1 information

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IPP023N10N5AKSA1 Typical application Circuitry

The IPP023N10N5AKSA1 is a noteworthy power MOSFET hailing from the OptiMOS™ 5 series. Renowned for its excellent thermal performance, reduced switching losses, and outstanding power efficiency, the OptiMOS™ 5 series finds its utility in diverse high-performance applications, ranging from DC-DC converters to motor drives. The inclusion of the IPP023N10N5AKSA1 in a circuit demands rigorous attention to detail, especially regarding its pin-specific connections. This guide aims to elucidate the exact procedure to interface this MOSFET within a system, with a focus on its individual pins and safeguarding operational integrity.

1. Blueprint for Effective Circuit Implementation:

- Drain (D): Serving as the main conduit for current destined for the load, the Drain terminal of the IPP023N10N5AKSA1 should establish a direct linkage to one terminus of the load. The alternate end of the load typically finds its connection either to the positive terminal of the power supply (in the realm of high-side switches) or ground (common in low-side switch deployments).

- Gate (G): Regulating the conduction state of the IPP023N10N5AKSA1, the Gate terminal needs connectivity with the control circuit's emanation point. Often, an intermediary resistor is judiciously introduced in series to fine-tune the switching cadence and bolster protective measures. A gate resistor, placed strategically, aids in moderating current influx during transitions and stabilizing potential oscillatory behavior.

- Source (S): Predominantly anchored to ground in streamlined switch implementations, the Source terminal, when incorporated in high-side switching mechanisms, fuses directly with the load segment.

2. Induction of Protective Mechanisms:

- Snubber Circuit: Given the high-speed switching capabilities of the IPP023N10N5AKSA1, integrating a snubber circuit can quell potential voltage transients and ringing.

- Gate Defense Mechanisms: Instituting a zener diode between the gate and source erects a formidable barrier against voltage overshoots. Additionally, a judiciously selected resistor, embedded within the gate trajectory, offers an additional layer of protection, ensuring the IPP023N10N5AKSA1 remains safeguarded against voltage spikes.

3. Heat Mitigation Strategies: The inherent capability of the IPP023N10N5AKSA1 to accommodate high currents underscores the imperative for adept heat management. Implementing heat sinks or other thermal dissipation mechanisms, in line with specified thermal metrics, ensures the MOSFET operates within its optimal temperature range.

4. Precision in Gate Drive Configuration: To harness the full potential of the IPP023N10N5AKSA1, achieving the prescribed gate voltage is crucial. Occasionally, this may necessitate the introduction of a dedicated driver module or level transitioner, particularly when the control logic is of a low-voltage character.

5. Observance of Specified Boundaries: Ensuring that the IPP023N10N5AKSA1 operates within its delineated voltage and current thresholds is non-negotiable. This vigilance prevents potential malfunctions due to overloads or transient phenomena.

6. Systematic Performance Assessment: Following the circuit's assembly, it's imperative to undertake a meticulous evaluation under subdued power settings. This appraisal ensures the IPP023N10N5AKSA1 -centric system operates seamlessly under its designated load.

While the IPP023N10N5AKSA1 exemplifies resilience and efficiency, respecting electrostatic discharge protocols during its handling and integration remains paramount. Leveraging this MOSFET to its fullest potential mandates comprehensive consultation of its datasheet, ensuring a grasp over the nuances specific to the IPP023N10N5AKSA1.

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6. What is the process for return or replacement of IPP023N10N5AKSA1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPP023N10N5AKSA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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